Diodes ZVN4210G User Manual
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - NOVEMBER 1995
FEATURES
* Low R
PARTMARKING DETAIL - ZVN4210
ABSOLUTE MAXIMUM RATINGS.
PA RAM ETE R SY MBO L VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTER ISTI CS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold Volt age V
Gate-Body Leakage I
Zero Gate Voltage D rain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
DS(on)
= 1.5Ω
=25°C I
amb
=25°C P
amb
BV
DSS
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
fs
iss
C
oss
rss
d(on)
r
d(off)
f
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
100 V ID=1mA, VGS=0V
0.8 2.4 V ID=1mA, VDS= V
100 nA
10
µA
100
µA
2.5 A VDS=25V, VGS=10V
1.5
Ω
1.8
Ω
250 mS VDS=25V,ID=1.5A
100 pF
40 pF VDS=25V, VGS=0V, f=1MHz
12 pF
4ns
8ns
20 ns
30 ns
ZVN4210G
D
G
100 V
0.8 A
6A
± 20
2W
-55 to +150 °C
V
=± 20V, VDS=0V
GS
VDS=100V, VGS=0
V
=80V, VGS=0V, T=125°C(2)
DS
VGS=10V,ID=1.5A
V
=5V,ID=500mA
GS
V
≈25V, ID=1.5A
DD
V
GS
D
S
ZVN4210G
DRAIN-SOURCE DIODE CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.
Diode Forward Voltage (1) V
Reverse Recovery Time
(to I
=10%)
R
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source im pedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
SD
T
RR
-
0.79
-
0.89--
- 135 ns IF=0.45A, VGS=0V,
V
IS=0.32A, VGS=0V
V
I
S
I
R
=1.0A, VGS=0V
=100mA, VR=10V
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