Diodes ZVN4210A User Manual
N-CHANNEL ENHANCEMENT
E-Line
TO92 Compatible
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
*R
DS(on)
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
DS
= 1.5Ω
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVN4210A
D
G
S
100 V
450 mA
6A
± 20
700 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2)g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
100 V ID=1mA, VGS=0V
DSS
0.8 2.4 V ID=1mA, VDS= V
100 nA
10
100
V
VDS=100V, VGS=0
µA
V
µA
2.5 A VDS=25V, VGS=10V
1.5
1.8
VGS=10V,ID=1.5A
Ω
V
250 mS VDS=25V,ID=1.5A
100 pF
40 pF VDS=25V, VGS=0V, f=1MHz
12 pF
4ns
8ns
V
20 ns
30 ns
=± 20V, VDS=0V
GS
=80V, VGS=0V, T=125°C(2)
DS
=5V,ID=500mA
GS
≈25V, ID=1.5A
DD
3-388
GS
E-Line
TO92 Compatible
TYPICAL CHARACTERISTICS
5
4
nt (Amps)
3
e
r
r
u
C
2
n
i
a
r
1
D
-
D
I
0
012345678910
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
VGS=
10V
9V
8V
7V
6V
5V
4V
3.5V
3V
2.5V
2V
ZVN4210A
)
Ω
100
(
10
1
0.1
RDS(on)-Drain Source On Resistance
ID-Drain Current
On-resistance v drain current
VGS=3V
3.5V
1.0
5V
(Amps)
8V
10V
6V
10
2.6
2.4
(th)
S
2.2
G
V
2.0
nd
1.8
a
n)
1.6
o
(
S
D
1.4
1.2
1.0
0.8
0.6
Normalised R
-50
a
Dr
-25 0 25 50 75
tan
s
i
s
e
e R
ourc
S
n-
i
G
ate
T
h
resh
100
Tj-Junction Temperature (°C)
Normalised R
200
160
pF)
(
120
nce
ita
c
80
pa
Ca
40
C-
0
0
DS(on)
20
GS(th)
and V
40 60 80 100
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
)
n
o
S(
D
VGS=10V
R
e
ID=1.5A
c
V
GS=VDS
ID=1mA
o
l
d
V
o
l
t
a
g
e
V
G
150
125 175 200
v Temperature
1000
900
800
700
600
500
400
ductance (mS)
n
o
300
c
200
rans
S(
T
H
)
225
100
-T
s
f
0
g
0
VDS=10V
345
2
1
ID(on)- Drain Current (Amps)
Transconductance v drain current
VDD=
50V
20V
80V
2
3456
Ciss
Coss
Crss
olts)
V
(
ge
ta
l
o
ce V
ur
So
Gate
-
GS
V
16
14
ID=1.5A
12
10
8
6
4
2
0
0
1
Q-Charge (nC)
Gate charge v gate-source voltage
3-389
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