Diodes ZVN4206GV User Manual
SOT223 N-CHANNEL ENHANCEMENT
G
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt V
*R
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
PARTMARKING DETAIL - ZVN4206V
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Continuous Body Diode Current at T
25°C
Avalanche Current - Repetitive I
Avalanche Energy - Repetitive E
Operating and Storage Temperature Range T
DS(on)
DS
= 1Ω
= 25°C I
amb
= 25°C P
amb
=
amb
D
DM
I
SD
AR
DS
GS
tot
AR
j:Tstg
ZVN4206GV
D
60 V
1A
8A
± 20
2W
600 mA
600 mA
15 mJ
-55 to +150 °C
S
D
V
ZVN4206GV
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current (1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
60 V ID=1mA, VGS=0V
DSS
1.3 3 V ID=1mA, VDS= V
100 nA
10
µA
100
µA
3AV
1
Ω
1.5
Ω
300 mS VDS=25V,ID=1.5A
100 pF
60 pF VDS=25V, VGS=0V, f=1MHz
20 pF
8ns
12 ns
12 ns
15 ns
GS
V
=± 20V, VDS=0V
GS
VDS=60V, VGS=0V
V
=48V, VGS=0V, T=125°C(2)
DS
=25V, VGS=10V
DS
VGS=10V, ID=1.5A
V
=5V, ID=0.5A
GS
V
≈25V, ID=1.5A, V
DD
=10V
GEN
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Loading...