Diodes ZVN4206G User Manual

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 3 - JANUARY 1996 ✪

FEATURES
* Compact geometry
* Fast switching speeds
* No secondary breakdown and Excel lent temper atur e stabi lity
* High input impedance and low current drive
* Ease of parralleling

APPLICATIONS
* DC-DC converters
* Solenoid / relay drivers for automotive applicat ions
* Stepper motor drivers and Print he ad drivers

PARTMARKING DETAIL - ZVN4206

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

amb

=25°C I

amb

=25°C P

DS

D

DM

GS

tot

j:Tstg

ZVN4206G

D

G

60 V

1A
8A

± 20

2W

-55 to +150 °C

S

D

V

ZVN4206G

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV
Gate-Source Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I

On-State Drain Current (1) I
Static Drain-Source On-State

Resistance (1)
Forward Transconductance (1)(2) g
Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.

GSS

DSS

D(on)

R

C

d(on)

r

d(off)

f

GS(th)

DS(on)

fs

iss

oss

rss

60 V ID=1mA, VGS=0V

DSS

1.3 3 V ID=1mA, VDS= V
100 nA
10

µA

100

µA

3AV

1

Ω

1.5

Ω

300 mS VDS=25V,ID=1.5A

100 pF
60 pF VDS=25V, VGS=0V, f=1MHz

20 pF
8ns
12 ns
12 ns
15 ns

GS

V

=± 20V, VDS=0V

GS

VDS=60V, VGS=0V
V

=48V, VGS=0V, T=125°C(2)

DS

=25V, VGS=10V

DS

VGS=10V, ID=1.5A
V

=5V, ID=0.5A

GS

V

≈25V, ID=1.5A, V

DD

GEN

=10V

(3) Switching times measured with 50Ω source im pedance and <5ns rise time on a pulse generator

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