Diodes ZVN4206AV User Manual
N-CHANNEL ENHANCEMENT
D
G
S
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt V
*R
* Repetitive avalanche rating
* No transient protection required
* Characterised for 5V logic drive
APPLICATIONS
* Automotive relay drivers
* Stepper motor driver
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Continuous Body Diode Current at T
=25°C
Avalanche Current – Repetitive I
Avalanche Energy – Repetitive E
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV
Gate-Source Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
DS(on)
DS
= 1Ω
=25°C I
amb
=25°C P
amb
amb
DSS
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
fs
iss
C
oss
rss
d(on)
r
d(off)
f
DS
D
DM
GS
tot
I
SD
AR
AR
j:Tstg
= 25°C unless otherwise stated).
amb
60 V ID=1mA, VGS=0V
1.3 3 V ID=1mA, VDS= V
100 nA
10
µA
100
µA
3AV
1
Ω
1.5
Ω
300 mS VDS=25V,ID=1.5A
100 pF
60 pF VDS=25V, VGS=0V, f=1MHz
20 pF
8ns
12 ns
12 ns
15 ns
ZVN4206AV
TO92 Compatible
60 V
600 mA
8A
± 20
700 mW
600 mA
600 mA
15 mJ
-55 to +150 °C
V
=± 20V, VDS=0V
GS
VDS=60V, VGS=0
V
=48V, VGS=0V, T=125°C(2)
DS
=25V, VGS=10V
DS
VGS=10V,ID=1.5A
V
=5V,ID=.0.5A
GS
V
≈25V, ID=1.5A,V
DD
E-Line
GS
GEN
V
=10V
TYPICAL CHARA CTERIS TICS
10
10
8
8
6
6
nt (Amps)
nt (Amps)
e
e
urr
urr
4
4
C
C
ain
ain
r
r
2
2
D
D
-
-
D
D
I
I
0
0
10
10
8
8
6
6
Voltage (Volts)
Voltage (Volts)
4
4
2
2
Drain Source
Drain Source
DS-
DS-
0
0
V
V
V
GS=
V
GS=
20V
20V
16V
16V
14V
14V
12V
12V
010 20 304050
010 20 304050
V
DS
- Drain Source Voltage (Volts)
V
DS
- Drain Source Voltage (Volts)
Output Characteristics
Output Characteristics
02 4 6 8 10
02 4 6 8 10
V
GS-
V
GS-
Gate Source Voltage
Gate Source Voltage
Voltag e Saturation Characte ris tics
Voltag e Saturation Characte ris tics
(Volts)
(Volts)
10V
10V
9V
9V
8V
8V
7V
7V
6V
6V
5V
5V
4.5V
4.5V
4V
4V
3.5V
3.5V
I
D=
I
D=
3A
3A
1.5A
1.5A
0.5A
0.5A
ZVN4206AV
10
10
8
8
Amps)
Amps)
6
6
t (
t (
n
n
4
4
2
2
- Drain Curre
- Drain Curre
D
D
I
I
0
0
)
)
6
6
nt (Amps
nt (Amps
4
4
e
e
r
r
r
r
u
u
C
C
n
n
i
i
a
a
2
2
r
r
D
D
-
-
D
D
I
I
0
0
246810
246810
V
DS
- Drain Source Voltage (Volts)
V
DS
- Drain Source Voltage (Volts)
Saturation Characteristics
Saturation Characteristics
V
DS=
10V
V
DS=
10V
0246810
0246810
GS-
Gate Source Voltage (Volts)
GS-
Gate Source Voltage (Volts)
V
V
Transfer Characteristics
Transfer Characteristics
V
V
20V
20V
16V
16V
14V
14V
12V
12V
10V
10V
9V
9V
8V
8V
7V
7V
6V
6V
5V
5V
4.5V
4.5V
3.5V
3.5V
GS=
GS=
4V
4V
GS
=3.5V 8V 10V
GS
=3.5V 8V 10V
V
V
10
(Ω)
1.0
-Drain Source On Resistance
0.1
0.1
0.1
0.1
DS(on)
R
ID-Drain Current (Amps)
ID-Drain Current (Amps)
On-resistance v drain current
On-resistance v drain current
4.5V
4.5V
6V
6V
14V
14V
20V
20V
10
1.0
1.0
10
2.6
2.4
2.2
GS(th)
GS(th)
2.0
d V
d V
n
n
1.8
a
a
n)
n)
1.6
o
o
DS(
DS(
1.4
1.2
1.0
0.8
0.6
Normalised R
Normalised R
-50
-50
-25 0 25 50 75
-25 0 25 50 75
Normalised R
Normalised R
)
n
S(o
D
R
tance
s
i
s
e
e R
rc
u
o
S
-
ain
Dr
G
ate
T
h
res
h
o
l
d
V
o
lt
ag
e
V
GS
(
100 150
100 150
Tj-Junction Temperature (°C)
Tj-Junction Temperature (°C)
DS(on)
DS(on)
and V
and V
GS(th)
GS(th)
TH
125 175 200
125 175 200 225
v Temperature
v Temperature
V
GS=
ID=1.5A
V
GS=VDS
ID=1mA
)
10V
225
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