Diodes ZVN4206A User Manual
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JUNE 94
FEATURES
* 60 Volt V
*R
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
DS(on)
DS
=1Ω
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVN4206A
D
G
S
E-LINE
TO92 COMPATIBLE
60 V
600 mA
8A
± 20
0.7 W
-55 to +150 °C
V
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2)g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GSS
I
DSS
D(on)
R
C
C
d(on)
r
d(off)
f
GS(th)
DS(on)
fs
iss
oss
rss
60 V ID=1mA, VGS=0V
DSS
1.3 3 V ID=1mA, VDS=V
100 nA
10
µA
100
µA
3AV
1
Ω
1.5
Ω
300 mS VDS=25V,ID=1.5A
100 pF
60 pF VDS=25V, VGS=0V, f=1MHz
20 pF
8ns
12 ns
12 ns
15 ns
GS
V
=± 20V, V
GS
V
=60V, VGS=0
DS
V
=48V, VGS=0V, T=125°C(2)
DS
=25V, VGS=10V
DS
V
=10V,ID=1.5A
GS
V
=5V,ID=500mA
GS
≈25V, I
V
DD
DS
=1.5A
D
=0V
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ZVN4206A
TYPICAL CHARACTERISTICS
10
8
6
nt (Amps)
e
urr
4
C
n
i
a
r
2
D
-
D
I
0
V
GS=
20V
16V
14V
12V
010 20304050
V
DS
- Drain Source Voltage (Volts)
Output Characteristics
10
8
6
Voltage (Volts)
4
2
Drain Source
DS-
0
V
02 4 6 8 10
V
GS-
Gate Source Voltage
(Volts)
Vo ltag e Sa turation Characteristics
10V
9V
8V
7V
6V
5V
4.5V
4V
3.5V
I
D=
3A
1.5A
0.5A
10
8
Amps)
6
t (
n
4
2
- Drain Curre
D
I
0
246810
V
DS
- Drain Source Voltage (Volts)
Saturation Characteristics
6
nt (Amps)
e
4
r
r
u
C
n
i
a
r
2
D
-
D
I
0
0246810
V
DS=
10V
V
GS-
Gate Source Voltage (Volts)
Transfer Characteristics
V
20V
16V
14V
12V
10V
9V
8V
7V
6V
5V
4.5V
3.5V
GS=
4V
1.0
GS
=3.5V
V
10
0.1
ID-Drain Current
)
Ω
(
-Drain Source On Resistance
DS(on)
R
0.1
On-resistance v drain current
4.5V
1.0
6V
(Amps)
8V
10V
14V
20V
10
2.6
2.4
(th)
S
2.2
G
V
2.0
nd
a
1.8
n)
o
1.6
(
S
D
1.4
1.2
1.0
0.8
0.6
Normalised R
-50
u
o
-S
n
Drai
G
ate
T
h
res
-25 0 25 50 75
e R
rc
h
o
l
d
es
V
100 150
V
ID=1.5A
)
n
S(o
D
e R
c
tan
s
i
o
lt
ag
e
V
GS
(
TH
125 175 200
GS=
V
GS=VDS
ID=1mA
)
10V
225
Tj-Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
v Temperature
3-382
Loading...