Diodes ZVN3320F User Manual
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – DECEMBER 1995 ✪
FEATURES
* 200 Volt V
*R
DS(on)
PARTMARKING DETAIL – MU
DS
=25Ω
ZVN3320F
D
G
S
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
200 V
60 mA
1A
± 20
V
330 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage
Drain Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)
(2)
Input Capacitance (2) C
Common Source
Output Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GSS
I
DSS
D(on)
R
g
C
C
d(on)
r
d(off)
f
GS(th)
DS(on)
fs
iss
oss
rss
200 V ID=1mA, VGS=0V
DSS
1.0 3.0 V ID=1mA, VDS=V
100 nA
10
50
µA
µA
V
GS
V
DS
V
DS
T=125°C
250 mA VDS=25V, VGS=10V
25
VGS=10V,ID=100mA
Ω
75 mS VDS=25V,ID=100mA
45 pF
18 pF VDS=25V, VGS=0V, f=1MHz
5pF
5ns
7ns
6ns
V
DD
6ns
GS
=± 20V, V
=0V
DS
=200V, VGS=0V
=160V, VGS=0V,
(2)
≈25V, I
=100mA
D
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 398
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