Diodes ZVN3310F User Manual

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g
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Product Summary
V
(V)
DS
R
()
DS(ON)
100
10
Description and Applications
This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general purpose applications.
General purpose 100V FET
Power management
Disconnect switches
Telecoms
Complementary Type – ZVP3310F
TOP VIEW
G
Pin Out Confi
SOT-23
D
TOP VIEW
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ZVN3310F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
High pulse current handling in linear mode
Low input capacitance
Fast switching speed
Lead Free By Design/RoHS Compliant (Note 1)
Mechanical Data
Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
Gate
S
uration
E
Source
uivalent Circuit
Ordering Information (Note 2)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZVN3310FTA MF 7 8 3000
Notes: 1. No purposefully added lead.
2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MF
MF = Product Type Marking Code
ZVN3310F
Document Number DS31980 Rev. 4 - 2
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October 2009
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ZVN3310F
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
V
DSS
V
GSS
I
D
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C PD Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C
T
= 125°C (Note 4)
J
Gate-Source Leakage Gate Threshold Voltage
BV
V
DSS
I
DSS
I
GSS
GS(th
100
0.8
ON CHARACTERISTICS (Note 3)
On-State Drain Current Static Drain-Source On-Resistance
I
D (ON
R
DS (ON
500
DYNAMIC CHARACTERISTICS (Note 4)
Forward Transconductance (Note 3) gfs 100 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 5) Turn-On Rise Time (Note 5) Turn-Off Delay Time (Note 5) Turn-Off Fall Time (Note 5)
Notes: 3. Measured under pulsed conditions. Width = 300μs. Duty cycle ≤2%
4. Sample test.
5. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator.
C
iss
⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯
C C
t
D(on
t
D(off
oss rss
t
t
f
T
J, TSTG
3 5 5 7 4 6 5 7
1
50
20 nA
2.4 V
10
40 15
5
100 V ±20 V 100 mA
2 A
330 mW
-55 to +150 °C
V
ID = 1mA, VGS = 0V
= 100V, VGS = 0V
V
μA
DS
V
= 80V, VGS = 0V
DS
VGS = ±20V, VDS = 0V VDS = VGS, ID = 1mA
mA
VDS = 25V, VGS = 10V VGS = 10V, ID = 500mA
mS
V
= 25V, ID = 500mA
DS
V
= 25V, VGS = 0V
pF
ns
DS
f = 1.0MHz
V
25V, ID = 500mA
DD
ZVN3310F
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ZVN3310F
ZVN3310F
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Package Outline Dimensions
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ZVN3310F
E
e
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM
A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104
b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 e 0.95 NOM 0.037 NOM - - - - -
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Suggested Pad Layout
b 3leads
L1
A1
E1
e1
D
A
L
c
0.95
0.037
2.0
0.079
0.9
0.035
0.8 31
ZVN3310F
Document Number DS31980 Rev. 4 - 2
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inches
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
Diodes Incorporated
ZVN3310F
ZVN3310F
Document Number DS31980 Rev. 4 - 2
5 of 5
www.diodes.com
October 2009
© Diodes Incorporated
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