Diodes ZVN3310F User Manual
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Product Summary
V
(V)
DS
R
(Ω)
DS(ON)
100
10
Description and Applications
This MOSFET utilises a structure that combines low input
capacitance with relatively low on-resistance and has an intrinsically
higher pulse current handling capability in linear mode than a
comparable trench technology structure. This MOSFET is suitable for
general purpose applications.
• General purpose 100V FET
• Power management
• Disconnect switches
• Telecoms
• Complementary Type – ZVP3310F
TOP VIEW
G
Pin Out Confi
SOT-23
D
TOP VIEW
Product Line o
Diodes Incorporated
ZVN3310F
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• High pulse current handling in linear mode
• Low input capacitance
• Fast switching speed
• Lead Free By Design/RoHS Compliant (Note 1)
Mechanical Data
• Case: SOT-23
• Case Material: UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Drain
Gate
S
uration
E
Source
uivalent Circuit
Ordering Information (Note 2)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZVN3310FTA MF 7 8 3000
Notes: 1. No purposefully added lead.
2. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MF
MF = Product Type Marking Code
ZVN3310F
Document Number DS31980 Rev. 4 - 2
1 of 5
www.diodes.com
October 2009
© Diodes Incorporated
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ZVN3310F
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
V
DSS
V
GSS
I
D
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @TA = 25°C PD
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
T
= 125°C (Note 4)
J
Gate-Source Leakage
Gate Threshold Voltage
BV
V
DSS
I
DSS
I
GSS
GS(th
100
⎯ ⎯
⎯ ⎯
0.8
ON CHARACTERISTICS (Note 3)
On-State Drain Current
Static Drain-Source On-Resistance
I
D (ON
R
DS (ON
500
⎯ ⎯
DYNAMIC CHARACTERISTICS (Note 4)
Forward Transconductance (Note 3) gfs 100
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 5)
Turn-On Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Turn-Off Fall Time (Note 5)
Notes: 3. Measured under pulsed conditions. Width = 300μs. Duty cycle ≤2%
4. Sample test.
5. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
C
⎯ ⎯
iss
⎯ ⎯
⎯ ⎯
⎯
⎯
⎯
⎯
C
C
t
D(on
t
D(off
oss
rss
t
t
f
T
J, TSTG
⎯ ⎯
⎯
⎯ ⎯
⎯ ⎯
3 5
5 7
4 6
5 7
1
50
20 nA
2.4 V
10 Ω
40
15
5
100 V
±20 V
100 mA
2 A
330 mW
-55 to +150 °C
V
ID = 1mA, VGS = 0V
= 100V, VGS = 0V
V
μA
DS
V
= 80V, VGS = 0V
DS
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 1mA
mA
VDS = 25V, VGS = 10V
VGS = 10V, ID = 500mA
mS
V
= 25V, ID = 500mA
DS
V
= 25V, VGS = 0V
pF
ns
DS
f = 1.0MHz
V
≈ 25V, ID = 500mA
DD
ZVN3310F
Document Number DS31980 Rev. 4 - 2
2 of 5
www.diodes.com
October 2009
© Diodes Incorporated
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