Diodes ZVN3306F User Manual

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 3 – JANUARY 1996

FEATURES
*R
* 60 Volt V

DS(on)

=5Ω

DS

ZVN3306F

D

S

COMPLEMENTARY TYPE - ZVP3306F
PARTMARKING DETAIL - MC

ABSOLUTE MAXIMUM RATINGS.

SOT23

G

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

=25°C I

amb

Pulsed Drain Current I

Gate-Source Voltage V

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

DS

D

DM

GS

tot

j:Tstg

= 25°C unless otherwise stated).

60 V

150 mA

3A

± 20

V

330 mW

-55 to +150 °C

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source
Breakdown Voltage

Gate-Source Threshold
Voltage

Gate-Body Leakage I

Zero Gate Voltage
Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State
Resistance (1)

Forward Transconductance
(1)(2)

Input Capacitance (2) C

Common Source
Output Capacitance (2)

Reverse Transfer Capacitance
(2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

BV

V

GSS

I

DSS

D(on)

R

g

C

C

d(on)

r

d(off)

f

GS(th)

DS(on)

fs

iss

oss

rss

60 V ID=1mA, VGS=0V

DSS

0.8 2.4 V ID=1mA, VDS=V

20 nA

0.5
50

µA
µA

V

GS

V

DS

V

DS

750 mA VDS=18V, VGS=10V

5

VGS=10V, ID=500mA

Ω

150 mS VDS=18V, ID=500mA

35 pF

25 pF VDS=18V, VGS=0V, f=1MHz

8pF

3typ 5 ns

4typ 7 ns

4typ 6 ns

V

DD

5typ 8 ns

GS

=± 20V, V

=0V

DS

=60V, VGS=0V
=48V, VGS=0V, T=125°C(2)

≈18V, I

=500mA

D

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device

3 - 393

ZVN3306F

TYPICAL CHARACTERISTICS

9V

1.0

(Amps)

0.8

0.6

0.4

0.2

-On-State Drain Current

)
n

0

02 4 6 8 10

D(O

I

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

VGS=10V

8V

7V

6V

5V

4V

3V

10

8

6

Voltage (Volts)

4

2

Drain Source

DS-

0

V

02 4 6 8 10

VGS -Gate Source Volt age (Volts)

Voltage Saturation Characteristics

ID=
1A

0.5A

0.25A

1.0

ps)
Am

t (

0.8

n
e

r

0.6

Drain Cur

0.4

e
Stat

0.2

On-

-

)
n

0

O
D(

02 4 6 8 10

I

VGS-

Gate Source Voltage

VDS=10V

(Volts)

Transfer Characteristics

2.4

2.2

S(th)

2.0

G

1.8

nd V

1.6

a

1.4

DS(on)

1.2

R

d

1.0

e

s

0.8

ali

0.6

m

0.4

Nor

-60

-80

-40

Normalised R

-20 0 20 40 60 80

DS(on)

ID=-0.5A

tance
s

i

s

e

e R

rc

u

o

ain-S

Dr

G

ate

T

h

res

h

o

l

d

V

o

100 140 160

T-Temperature (C°)

GS(th)

and V

vs Temperature

(Ω)

10

5

ID=
1A

0.5A

0.25A

-Drain Source Resistance

1

DS(ON)

11020

R

VGS-Gate Source Voltage (Volts)

On-resistance vs gate-source voltage

)

n

S(o

D

R

l

t

ag

e

V

GS(

th

)

120

200
180
160

ctance (mS)

140

ndu

120

o

100

nsc

a

r
T

d
war

r

-Fo

fs

g

VDS=18V

80
60
40
20

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

ID(on) - Drain Current (Amps

)

Transconductance v drain current

3 - 394