Diodes ZVN3306A User Manual

N-CHANNEL ENHANCEMENT

D
G
S

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES
* 60 Volt V
*R

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

DSon)

=5Ω

DS

=25°C I

amb

=25°C P

amb

DS
D
DM

GS

tot

j:Tstg

ZVN3306A

E-Line

TO92 Compatible

60 V

270 mA

3A

± 20

625 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERI STIC S (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown

Voltage
Gate-Source Threshold

Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain

Current
On-State Drain Current(1) I
Static Drain-Source On-State

Resistance (1)
Forward Transconductance(1)(2)g

Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer Capacitance

(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

BV

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

60 V ID=1mA, VGS=0V

DSS

0.8 2.4 V ID=1mA, VDS= V

20 nA

0.5
50

µA
µA

V

GS

V

DS

V

DS

750 mA VDS=18V, VGS=10V

5

VGS=10V,ID=500mA

Ω

150 mS VDS=18V,ID=500mA

35 pF
25 pF VDS=18V, VGS=0V, f=1MHz

8pF

5ns
7ns

V

DD

6ns
8ns

3-375

2) Sample test.

GS

=± 20V, VDS=0V
=60V, VGS=0

=48V, VGS=0V, T=125°C(2)

≈18V, ID=500mA

(

D
G
S

ZVN3306A

TYPICAL CHARACTERISTICS

9V

1.0

(Amps)

0.8

0.6

0.4

0.2

-On-State Drain Current

)
n

0

02 4 6 8 10

D(O

I

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

1.0

ps)
Am

t (

0.8

n

e

r

0.6

Drain Cur

0.4

e
Stat

0.2

On-

-

)
n

0

O
D(

02 4 6 8 10

I

VGS-

Transfer Characteristics

VGS=10V

VDS=10V

Gate Source Voltage

(Volts)

8V

7V

6V

5V

4V

3V

10

8

6

Voltage (Volts)

4

2

Drain Source

DS-

0

V

02 4 6 8 10

ID=
1A

0.5A

0.25A

VGS -Gate Source Voltage (Volts)

Voltage Saturation Characteristics

(Ω)

10

5

ID=
1A

0.5A

0.25A

-Drain Source Resistance

1

DS(ON)

11020

R

VGS-Gate Source Voltage (Volts)

On-resistance vs gate-source voltage

2.4

2.2

S(th)

2.0

G

1.8

nd V

1.6

a

1.4

DS(on)

1.2

R

d

1.0

e

s

0.8

ali

0.6

m

0.4

Nor

-60

-40

-80

Normalised R

ID=-0.5A

e R

rc

u

o

ain-S

Dr

G

ate

T

h

res

h

-20 0 20 40 60 80

T-Temperature (C°)

DS(on)

and V

GS(th)

)

n

S(o

D

R

tance

s

i

s

e

o

l

d

V

o

l

t

ag

e

V

GS(

100 140 160

120

vs Temperature

200
180
160

ctance (mS)

140

ndu

120

o

100

nsc

80

a

r

60

T

d

40

th

)

war

20

r

0

-Fo

fs

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

g

VDS=18V

ID(on) - Drain Current (Amps

)

Transconductance v drain current

3-376