Diodes ZVN2110G User Manual

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 3 – OCTOBER 1995 ✪

FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED

PARTMARKING DETAIL - ZVN2110
COMPLEMENTARY TYPE - ZVP2110G

ABSOLUTE MAXIMUM RATINGS.

PA RAM ETE R SY MBO L VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T

=25°C I

amb

Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTER ISTI CS (at T

PARAMETER SYMBOL MIN. TYP. MAX . UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV
Gate-Source Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Curren t I

On-State Drain Current(1) I
Static Drain-Source On- State

Resistance (1)
Forward Transconductance (1)(2) g
Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

GS(th)
GSS
DSS

D(on)

R

DS(on)

fs

iss

C

oss

rss
d(on)
r
d(off)
f

DSS

DRAIN-SOURCE DIODE CHARACTERISTI CS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Diode Forward Voltage (1) V
Reverse Recovery Time T

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

SD

RR

DS
D
DM

GS

tot

j:Tstg

= 25°C unless otherwise stated).

amb

100 V ID=1mA, VGS=0V

0.8 2.4 V ID=1mA, VDS= V

0.1 20 nA

1

µA

100

µA

1.5

2

250 350 mS VDS=25V, ID=1A

59

AVDS=25V, VGS=10V

4

Ω

75 pF

16 25 pF V

4 8pF
4 7ns
4 8ns
8 13 ns

13 ns

8

0.82 VI
112 ns I

ZVN2110G

D

D

G

100 V
500 mA

6A

± 20

2W

-55 to +150 °C

GS

=± 20V, VDS=0V

V

GS

V

=100V, VGS=0

DS

=80V, VGS=0V, T=125°C(2)

V

DS

VGS=10V, ID=1A

=25 V, VGS=0V, f=1MHz

DS

≈25V, ID=1A

V

DD

=0.32A, VGS=0

S

=0.32A, VGS=0, IR=0.1A

F

V

S

ZVN2110G

V

GS=

10V

2.0

9V

1.6

1.2

0.8

0.4

-On-State Drain Current (Amps)

)
n

0

o
D(

I

8V

7V

020 406080100

DS

V

- Drain Source

Output Characteristics

TYPICAL CHARACTERISTICS

2.0

1.6

6V

5V

4V

3V

Voltage (Volts)

1.2

0.8

0.4

-On-State Drain Current (Amps)

0

)
n
o

D(

I

DS

V

Saturation Characteristics

GS=

V

10V

9V

8V
7V
6V

5V

4V

3V

246810

- Drain Source

Voltage (Volts)

10

8

6

Voltage (Volts)

4

2

Drain Source

DS-

0

V

0246810

V

GS-

Gate Source Voltage (Volts)

Voltag e Saturation Characteristics

(Ω)

10

5

1

1

ID=
1A

500mA
100mA

10 100

RDS(on)-Drain Source Resistance

V

GS-

Gate Source Voltage (Volts)

On-resistance v gate-source voltage

I

D=

1A

500mA

100mA

2.8

2.4

2.0

1.6

1.2

0.8

0.4

-On-State Drain Current (Amps)

)
n
o

0

D(

I

0246810

V

GS-

Gate Source Voltage (Volts)

Transfer Characteristics

2.4

2.2

S(th)

2.0

G

1.8

V
nd

1.6

a

)
n

1.4

S(o
D

1.2

1.0

0.8

0.6

Normalised R

-40

-20 0 20 40 60

Normalised R

u

o

S

-

n

Drai

Ga

te

T

Tj-Junction Temperature (°C)

DS(on)

and V

s

e

R

rce

h

res

h

o

80 120

GS(th)

s

i

l

100 140 160

DS(

e R

c

n

ta

d

V

o

l

t

a

v Temperature

g

n

o

e

)

V

GS=

ID=1 A

V

GS=VDS

ID=1mA

V

G

V

DS=

25V

V

DS=

10V

10V

S(

TH

)

180

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