Diodes ZVN2110A User Manual
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
*R
DS(on)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
= 4Ω
DS
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
ZVN2110A
D
G
S
E-Line
TO92 Compatible
100 V
320 mA
6A
± 20
700 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOLMIN. MAX. UNITCONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
100 V ID=1mA, VGS=0V
DSS
0.8 2.4 V ID=1mA, VDS= V
20 nA
1
100
µA
µA
V
V
V
1.5 A VDS=25V, VGS=10V
4
Ω
VGS=10V,ID=1A
250 mS VDS=25V,ID=1A
75 pF
25 pF VDS=25 V, VGS=0V, f=1MHz
8pF
7ns
8ns
V
13 ns
13 ns
GS
=± 20V, VDS=0V
GS
=100V, VGS=0
DS
=80V, VGS=0V, T=125°C(2)
DS
≈25V, ID=1A
DD
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Ω
S
tcgt
es
easu
edt50
sou
ce
pedacead5sseteoapusegee
ato
D
G
S
TYPICAL CHARACTERISTICS
VGS=
10V
2.0
1.6
1.2
0.8
0.4
-On-State Drain Current (Amps)
)
n
0
o
D(
I
9V
8V
7V
6V
5V
020406080100
DS
V
- Drain Source
Voltage (Volts)
Output Characteristics
ZVN2110A
V
2.0
1.6
1.2
0.8
4V
3V
0.4
-On-State Drain Current (Amps)
0
)
n
o
D(
I
246810
DS
V
- Drain Source
Voltage (Volts)
Saturation Characteristics
10V
GS=
9V
8V
7V
6V
5V
4V
3V
10
8
6
Voltage (Volts)
4
2
Drain Sourc e
DS-
0
V
0246810
VGS-Gate Source Voltage (Volts)
Vo ltag e Sa turation Characteristics
10
(Ω)
5
1
1
10 100
RDS(on)-Drain Source Resistance
VGS-Gate Source Voltage (Volts)
On-resistance v gate-source voltage
ID=
1A
500mA
100mA
2.8
2.4
2.0
1.6
ID=
1A
500mA
100mA
1.2
0.8
0.4
-On-State Drain Current (Amps)
)
n
o
0
D(
I
0246810
GS-Gate Source Voltage (Volts)
V
Transfer Characteristics
2.4
2.2
S(th)
2.0
G
1.8
V
nd
1.6
a
)
n
1.4
S(o
D
1.2
1.0
0.8
0.6
Normalised R
-40
Drai
Ga
-20 0 20 40 60
Tj-Junction Temperature (°C)
Normalised R
DS(on)
3-365
u
o
S
-
n
te
T
h
and V
ta
s
i
s
e
R
rce
res
h
o
l
d
80 120
100 140 160
GS(th)
)
n
o
DS(
e R
c
n
VGS=10V
ID=1 A
VGS=VDS
ID=1mA
V
o
l
t
a
g
e
V
G
S(
TH
)
v Temperature
VDS=25V
VDS=10V
180
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