Diodes ZVN2106G User Manual

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET

ISSUE 3 – NOVEMBER 1995

FEATURES
* 60 Volt V
*R

DS(on)

DS

=2Ω

ZVN2106G

D

COMPLEMENTARY TYPE - ZVP2106G
PARTMARKING DETAIL - ZVN2106

D

G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T

=25°C I

amb

Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERI STIC S (at T

DS
D
DM

GS

tot

j:Tstg

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CON DITIONS.

Drain-Source Breakdown Voltage BV
Gate-Source Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I

On-State Drain Current (1) I
Static Drain-Source On-State

GSS
DSS

D(on)

R

Resistance (1)
Forward Transconductance (1)(2) g
Input Capacitance (2) C
Common Source Output

C

Capacitance (2)
ReverseTransfer Capacitance(2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

d(on)
r
d(off)
f

GS(th)

DS(on)

fs
iss
oss

rss

60 V ID=1mA, VGS=0V

DSS

0.8 2.4 V ID=1mA, VDS= V
20 nA
500

nAµAVDS=60 V, VGS=0

100

2AV

2

Ω

300 mS VDS=18V,ID=1A

75 pF
45 pF VDS=18 V, VGS=0V, f=1MHz

20 pF
7ns
8ns
12 ns
15 ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device

60 V

710 mA

8A

± 20

V

2.0 W

-55 to +150 °C

GS

V

=± 20V, VDS=0V

GS

V

=48 V, VGS=0V,

DS

T=125°C

(2)

=18V, VGS=10V

DS

VGS=10V,ID=1A

V

≈18V, ID=1A

DD

S

ZVN2106G

TYPICAL CHARACTERISTICS

)

s

4

p

3

rent (Am
Cur

2

1

tate Drain

On-S

-

0

n)
(O

01 2 3 4 5

D

I

100

80

)
F

p

tance (

C-Capaci

DS

V

- Drain Source Voltage (Volts)

Saturation Characteristics

60

40

20

0

10 20

30

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

40 50

VGS=
10V
9V

8V
7V

6V

5V

4V

Ciss

Coss

Crss

VDD=

50V

30V

16

)
ts
ol

tage (V
ol

ource V
ate S

3V

-G

GS

V

ID=3A

14
12
10

8
6

4
2
0

0

0.5 1.0 1.5 2.0

20V

2.5 3.0

Q-Charge (nC)

Gate charge v gate-source voltage

(Ω)

10

1

-Drain Source On-Resistance

0.1
11020

DS(ON)

R

VGS-Gate Source Voltage

(Volts)

ID=
1A

0.5A

0.25A

On-resistance v gate-source voltage

2.4

)
h

t

2.2

GS(

2.0

1.8

and V

1.6

)
on

1.4

S(
D

1.2

d R

1.0

0.8

0.6

Normalise

0.4

-60

-40

-80

Normalised R

ance

sist

Re

ource

in-S

ra

D

Ga

te T

hresh

old

V

ol

tage

-20 0 20 40 60 80

100 140 160

Tj-Junction Temperature (C°)

DS(on)

and V

v Temperature

GS(th)

S(

D

R

VGS=10V
ID=1A

VGS=VDS

ID=1mA

V

120

0.7

on)

G

S

(

t

h)

)

0.6

S

0.5

0.4

0.3

0.2

ransconductance (

T

-

0.1

s

f

g

0

01 2 3 4 5

VDS=10V

ID- Drain Current (Amps

)

Transconductance v drain current

3 - 386 3 - 385