Diodes ZVN2106A User Manual

N-CHANNEL ENHANCEMENT

D
G
S

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES
* 60 Volt V
*R

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

DS(on)

=2Ω

DS

=25°C I

amb

=25°C P

amb

DS
D
DM

GS

tot

j:Tstg

ZVN2106A

E-Line

TO92 Compatible

60 V

450 mA

8A

± 20

700 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERI STIC S (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UN IT CONDITIONS.
Drain-Source Breakdown

Voltage
Gate-Source Threshold

Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain

Current

On-State Drain Current(1) I
Static Drain-Source On-State

Resistance (1)
Forward Transconductance

(1)(2)
Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer Capacitance

(2)

BV

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

60 V ID=1mA, VGS=0V

DSS

0.8 2.4 V ID=1mA, VDS= V

20 nA
500

nAµAVDS=60 V, VGS=0

100

2AV

2

Ω

300 mS VDS=18V,ID=1A

75 pF
45 pF VDS=18 V, VGS=0V, f=1MHz

20 pF

3-361

V

GS

V

DS

T=125°C

DS

VGS=10V,ID=1A

GS

=± 20V, VDS=0V

=48 V, VGS=0V,

(2)

=18V, VGS=10V

D
G
S

ZVN2106A

TYPICAL CHARACTERISTICS

4

(Amps)

t

3

2

Drain Curren

ate

t

1

-On-S

)
n

0

O

01 2 3 4 5

D(

I

VDS - Drain Source Voltage (Volts)

Saturation Characteristics

4

ps)
m

(A

t

3

2

Drain Curren

1

ate

t

-On-S

)

0

n
O

012345678910

D(

I

GS-

V

Gate Source

Voltage (Volts)

Transfer Characteristics

VGS=
10V
9V

8V
7V

6V

5V
4V

3V

VDS=
10V

2.0

1.8

1.6

1.4

1.2

1.0

Voltage (Volts)

0.8

0.6

0.4

0.2

Drain Source

0

DS-

0246810

V

VGS-Gate Source Voltage (Volts)

Vo lta ge Sa turation Characteristics

)

Ω

(

10

1

-Drain Source On-Resistance

0.1
1234567891020

DS(ON)

R

VGS-Gate Source Voltage (Volts)

On-resistance v gate-source voltage

ID=
1A

0.5A

0.25A

ID=
1A

0.5A

0.25A

2.4

2.2

2.0

GS(th)

1.8

d V

n

1.6

a

n)

1.4

o
DS(

1.2

1.0

d R

e

0.8

0.6

0.4

Normalis

-60

-80

Normalised R

e R

rc

u

o

S

-

n

Drai

G

ate

T

h

res

h

o

l

d

-20 0 20 40 60 80

-40

Tj-Junction Temperature (C°)

DS(on)

and V

GS(th)

)

n

S(o

D

e R

c

n

ta

s

i

es

VGS=10V
ID=1A

VGS=VDS

ID=1mA

V

o

l

t

ag

e

V

GS(

th

)

100 140 160

120

vs Temperature

3-362

0.7

0.6

0.5

nce (S)

0.4

ucta

0.3

nd

o
sc

0.2

an

r

T

0.1

-

fs

g

0

01 2 3 4 5

VDS=10V

ID- Drain Current (Amps)

Transconductance v drain current