Diodes ZVN0545G User Manual
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - DECEMBER 1995 ✪
FEATURES
* 450 Volts V
*R
DS(on)
* Ease of paralleling
PARTMARKING DETAIL – ZVN0545
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTER ISTI CS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage D rain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward
Transconductance(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
= 50Ω
DS
=25°C I
amb
=25°C P
amb
BV
DSS
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
DS
D
DM
GS
tot
j:Tstg
= 25°C unless otherwise stated).
amb
450 V ID=1mA, VGS=0V
13VID=1mA, VDS= V
20 nA
10
µA
400
µA
150 mA VDS=25 V, VGS=10V
50
Ω
100 mS VDS=25V,ID=100mA
70 pF
10 pF VDS=25 V, VGS=0V, f=1MHz
4pF
7ns
7ns
16 ns
10 ns
3 - 384
ZVN0545G
D
G
450 V
140 mA
600 mA
± 20
2W
-55 to +150 °C
V
=± 20V, VDS=0V
GS
VDS=450 V, VGS=0
V
=405 V, VGS=0V,
DS
T=125°C
(2)
VGS=10V,ID=100mA
V
≈25V, ID=100mA
DD
V
GS
D
S
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