Diodes ZVN0540A User Manual

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES * 400 Volt V *R

DS(on)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate-Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

=50Ω

DS

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

ZVN0540A

D G S

E-Line

TO92 Compatible

400 V

90 mA

600 mA

± 20

700 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State Resistance (1)

Forward Transconductance(1)(2)g

Input Capacitance (2) C

Common Source Output Capacitance (2)

Reverse Transfer Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

BV

V

GS(th )

GSS

I

DSS

D(on)

R

DS(on)

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

400 V ID=1mA, VGS=0V

DSS

1 3 V ID=1mA, VDS= V

20 nA

10 400

µA µA

V

GS

V

DS

V

DS

T=125°C

150 mA VDS=25 V, VGS=10V

50

VGS=10V,ID=100mA

Ω

100 mS VDS=25V,ID=100mA

70 pF

10 pF VDS=25 V, VGS=0V, f=1MHz

4pF

7ns

7ns

V

DD

16 ns

10 ns

=± 20V, V

=400 V, VGS=0 =320 V, VGS=0V,

(2)

≈25V, I

3-356

GS

=0V

DS

=100mA

D

( 1

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