Diodes ZVN0124A User Manual

N-CHANNEL ENHANCEMENT

D
G
S

MODE VERTICAL DMOS FET

ISSUE 1 – MARCH 94

FEATURES
* 240 Volt V
*R

DS(on)

APPLICATIONS
* Telephone handsets

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Curren t at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T

=16Ω

DS

=25°C I

amb

=25°C P

amb

DS
D
DM

GS

tot

j:Tstg

ZVN0124A

E-Line

TO92 Compatible

240 V
160 mA

2A

± 20

700 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERI STIC S (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown

Voltage
Gate-Source Threshold

Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain

Current

On-State Drain Current(1) I
Static Drain-Source On-State

Resistance (1)
Forward Transconductance

(1)(2)
Input Capacitance (2) C
Common Source Output

Capacitance (2)
Reverse Transfer

Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.

BV

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)
r
d(off)
f

240 V ID=1mA, VGS=0V

DSS

1 3 V ID=1mA, VDS= V

20 nA
10

100

V

GS

VDS=240 V, VGS=0

µA

V

µA

DS

T=125°C

500 mA VDS=25 V, VGS=10V

16

VGS=10V,ID=250mA

Ω

100 mS VDS=25V,ID=250mA

85 pF
20 pF VDS=25 V, VGS=0V, f=1MHz

7pF

7ns
8ns
16 ns

V

DD

8ns

3-350

GS

=± 20V, VDS=0V

=192 V, VGS=0V,

(2)

≈25V, ID=250mA

(
3

D
G
S

TYPICAL CHARACTERISTICS

ZVN0124A

2.0

ps)

1.8

Am

t(

en

r

r

u
C

n

i

a

r
D

te
Sta
On

)
N

D(O

I

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0

VGS=10V

8V

6V

5V

4V

020406080100

80µs pulse

VDS-Drain Source Voltage (Volts)

Output Characteristics

20

18
16
14

(Volts)

12
10

8
6

Drain Source

4

DS-

2

V

0

0246810

VGS-Gate Source Voltage (Volts)

Voltage Saturation Characteristics

)

1.0

Amps
t (

0.8

en

r

r

u

0.6

C

n

i

a

r

0.4

D
te

Sta

0.2

3V

2V

­On

-

)

0

n
o

0246810

D(

I

VGS=10V

7V
5V

4V

3V

2V

VDS-Drain Source V oltage (Volts)

Saturation Characteristics

2.0

1.8

Amps)
(

1.6

nt

e

r

1.4

ID=
1A

500mA

100mA

r

1.2

Cu

1.0

ain

0.8

te Dr

0.6

a
St

0.4

On-

0.2

­N)

0

O

02 4 6 8 10

D(

I

VDS=25V

VDS=10V

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

)

Ω

(

100

ID=

10

1A
500mA

I00mA

-Drain Source Resistance

1

DS(ON)

110

R

20

VGS-Gate Source Voltage (Volts)

On-resistance vs gate-source voltage

3-351

2.4

2.2

h)
S(t

2.0

G

1.8

1.6

and V

1.4

DS(on)

1.2

R
d

1.0

ise

0.8

0.6

mal

r

0.4

No

0 -60 -40 -20 0 20 40 60 80

Temperature (°C)

Normalised R

DS(on)

in

a

Dr

G

ate

and V

-S

T

ourc

h

res

GS(th)

e

R

e

h

o

on)

S(

D

R

e

c

an

t

s

i

s

VGS=10V

ID=0.25A

VGS=VDS
ID=1mA

l

d

V

o

l

tage

V

GS

(

th

100

120 140 160

V Temperature

)