Diodes ZUMT720 User Manual
Super323 SOT323 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
* 1A Peak Pulse Current
* Excellent H
* Low Saturation Voltage
* Low Equivalent On Resistance; R
APPLICATIONS
* Boost functions in DC-DC converters
* Motor driver functions
Characteristics Up To 1A (pulsed)
FE
CE(sat)
ZUMT720
DEVICE TYPE COMPLEMENT PARTMARKING R
ZUMT720 ZUMT619 T73 240mV at 750mA
CE(sat)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
† Recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
=25°C* P
amb
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
tot
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-40 V
-40 V
-5 V
-1 A
-0.75 A
-200 mA
385 †
500 ‡
-55 to +150 °C
mW
ZUMT720
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
(on)
(off)
-40 V
I
=-100µA
C
-40 V IC= -10mA*
-5 V
= -100µA
I
E
-10 nA VCB=-35V
-10 nA VEB=-4V
-50
-90
-140
-180
-10 nA V
-65
mV
-120
mV
-200
mV
-250
mV
=-35V
CES
IC= -0.1A, IB= -10mA*
I
= -0.25A, IB=-20mA*
C
I
= -0.5A, IB=-50mA*
C
I
= -0.75A, IB=-100mA*
C
-1000 -1100 mV IC= -0.75A, IB= -100mA*
-890 -1100 mV IC= -0.75A, VCE= -2V*
300
300
90
40
20
510
450
190
60
30
IC= -10mA, VCE=-2V*
I
= -0.1A, VCE= -2V*
C
I
= -0.5A, VCE=-2V*
C
I
= -0.75A, VCE= -2V*
C
I
= -1A, VCE= -2V*
C
220 MHz IC= -50mA, VCE=-10V
f= 100MHz
8pFV
= -10V, f=1MHz
CB
75 ns VCC= -10V, IC=-0.75A
I
=-100mA
315 ns
B1=IB2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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