Diodes ZUMT718 User Manual
Super323 SOT323 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 2 - JUNE 2000
FEATURES
*
500mW POWER DISSIPATION
* IC CONT 1A
* 3A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage
* Extremely Low Equivalent On Resistance; R
APPLICATIONS
* Switch functions in LED displays and Satellite receivers
* Negative boost functions in DC-DC converters
Characteristics Up To 3A (pulsed)
FE
CE(sat)
ZUMT718
DEVICE TYPE COMPLEMENT PARTMARKING R
ZUMT718 ZUMT618 T72 200m at 1A
CE(sat)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
† Recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
=25°C* P
amb
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
tot
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-20 V
-20 V
-5 V
-3 A
-1 A
-200 mA
385 †
500 ‡
-55 to +150 °C
mW
37
ZUMT718
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
f
T
obo
(on)
(off)
*Measured under pulsed conditions. Pulse width=300
-20 V
= -100A
I
C
-20 V IC= -10mA*
-5 V
= -100A
I
E
-10 nA VCB=-15V
-10 nA VEB=-4V
-33.5
-80
-130
-180
-10 nA V
-45
mV
-110
mV
-175
mV
-250
mV
=-15V
CES
IC= -0.1A, IB= -10mA*
I
= -0.25A, IB= -10mA*
C
I
= -0.5A, IB=-20 mA*
C
I
= -1A, IB= -100mA*
C
-970 -1100 mV IC= -1A, IB= -100mA*
-850 -1100 mV IC= -1A, VCE= 2V*
300
300
200
100
20
490
450
315
160
75
IC= -10mA, VCE=-2V*
I
= -0.1A, VCE= -2V*
C
= -0.5A, VCE=-2V*
I
C
I
= -1A, VCE= -2V*
C
I
= -1.5A, VCE= -2V*
C
210 MHz IC=-50mA, VCE=-10V
f=100MHz
11 pF VCB=-10V, f=1MHz
60 ns VCC= -10V, IC= -1A
I
=-100mA
135 ns
s. Duty cycle 2%
B1=IB2
38
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