Diodes ZUMT717 User Manual
Super323 SOT323 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
* 500mW POWER DISSIPATION
*IC CONT 1.5A
* 3A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage
* Extremely Low Equivalent On Resistance; R
APPLICATIONS
* Negative boost functions in DC-DC converters
* Supply line switching in mobile phones and pagers
* Motor drivers in camcorders and mini disk players
Characteristics Up To 3A (pulsed)
FE
CE(sat)
ZUMT717
DEVICE TYPE COMPLEMENT PARTMARKING R
ZUMT717 ZUMT617 T71 150mΩ at 1.25A
CE(sat)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
† Recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
=25°C* P
amb
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
tot
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-12 V
-12 V
-5 V
-3 A
-1.25 A
-200 mA
385 †
500 ‡
-55 to +150 °C
mW
ZUMT717
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
(on)
(off)
-12 V
I
= -100µA
C
-12 V IC= -10mA*
-5 V
= -100µA
I
E
-10 nA VCB=-10V
-10 nA VEB=-4V
-25
-55
-110
-160
-185
-10 nA V
-40
mV
-100
mV
-175
mV
-215
mV
-240
mV
=-10V
CES
IC= -0.1A, IB= -10mA*
I
= -0.25A, IB=-10 mA*
C
I
= -0.5A, IB=-10 mA*
C
I
= -1A, IB= -50mA*
C
I
= -1.25A, IB= -100mA*
C
-990 -1100 mV IC= -1.25A, IB= -100mA*
-850 -1000 mV IC= -1.25A, VCE= 2V*
300
300
200
125
75
30
490
450
340
250
140
80
I
= -10mA, VCE=-2V*
C
I
= -0.1A, VCE= -2V*
C
I
= -0.5A, VCE= -2V*
C
I
= -1.25A, VCE=-2V*
C
I
= -2A, VCE= -2V*
C
I
= -3A, VCE= -2V*
C
220 MHz IC= -50mA, VCE=-10 V
f= 100MHz
15 pF VCB= -10V, f=1MHz
50 ns VCC= -10V, IC=-1A
I
=-100mA
135 ns
B1=IB2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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