Diodes ZUMT619 User Manual
Super323SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 2 - DECEMBER 2008
FEATURES
*
500mW POWER DISSIPATION
*IC CONT 1A
* 2A Peak Pulse Current
* Excellent H
* Extremely Low Equivalent On Resistance; R
APPLICATIONS
* LCD backlighting inverter circuits
* Boost functions in DC-DC converters
Characteristics Up To 2A (pulsed)
FE
CE(sat)
ZUMT619
DEVICE TYPE COMPLEMENT PARTMARKING R
ZUMT619 ZUMT720 T63 160mΩ at 1A
CE(sat)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
† Recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
=25°C P
amb
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
tot
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
50 V
50 V
5V
2A
1.0 A
200 mA
385 †
500 ‡
-55 to +150 °C
mW
ZUMT619
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
(on)
(off)
50 V
I
= 100µA
C
50 V IC= 10mA*
5V
I
= 100µA
E
10 nA VCB= 40V
10 nA VEB= 4V
24
60
120
160
10 nA V
mV
35
mV
80
mV
200
mV
270
= 40V
CES
I
= 100mA, IB= 10mA*
C
I
= 250mA, IB= 10mA*
C
I
= 500mA, IB= 10mA*
C
I
= 1A, IB= 50mA*
C
940 1100 mV IC= 1A, IB= 50mA*
850 1100 mV IC= 1A, VCE= 2V*
200
300
200
75
20
420
450
350
130
60
I
=10mA, VCE= 2V*
C
I
= 100mA, VCE=2 V*
C
I
= 500mA, VCE=2V*
C
I
= 1A, VCE= 2V*
C
I
= 1.5A, VCE=2 V*
C
215 MHz IC= 50mA, VCE=10V
f= 100MHz
6 pF VCB= 10V, f=1MHz
150 ns VCC=10 V, IC= 1A
I
=100mA
425 ns
B1=IB2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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