Diodes ZUMT618 User Manual

Super323 SOT323 NPN SILICON

POWER(SWITCHING) TRANSISTOR

ISSUE 1 - SEPTEMBER 1998

FEATURES

* 500mW POWER DISSIPATION

*IC CONT 1.25A

* 3A Peak Pulse Current
* Excellent H
* Extremely Low Equivalent On Resistance; R

APPLICATIONS
* Corded telecoms.
* Boost functions in DC-DC converters
* Motor driver functions

Characteristics Up to 3A (pulsed)

FE

CE(sat)

ZUMT618

DEVICE TYPE COMPLEMENT PARTMARKING R

ZUMT618 ZUMT718 T62 125mΩ at1.25A

CE(sat)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current** I

Continuous Collector Current I

Base Current I

Power Dissipation at T

Operating and Storage Temperature
Range

† Recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.

=25°C P

amb

calculated using FR4 measuring 10 x 8 x 0.6mm (still air).

tot

CM

C

B

T

CBO

CEO

EBO

tot

j:Tstg

20 V

20 V

5V

4A

1.25 A

500 mA

385 †
500 ‡

-55 to +150 °C

mW

ZUMT618

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

Emitter Cut-Off
Current

Collector Emitter
Cut-Off Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward
Current Transfer
Ratio

Transition
Frequency

Output Capacitance C

Turn-On Time t

Turn-Off Time t

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

obo

(on)

(off)

20 V

I

= 100µA

C

20 V IC= 10mA*

5V

= 100µA

I

E

10 nA VCB= 16V

10 nA VEB= 4V

16.5
40
80
140
155

10 nA V

25

mV

60

mV

115

mV

200

mV

250

mV

= 16V

CES

IC= 100mA, IB=10mA*
I

= 250mA, IB= 10mA*

C

I

= 500mA, IB=10mA*

C

I

= 1A, IB=20mA*

C

I

= 1.25A, IB=50mA*

C

955 1100 mV IC= 1.25A, IB=50mA*

840 1100 mV IC= 1.25A, VCE= 2V*

200
300
200
100
40
20

420
450
380
300
180
60

I

= 10mA, VCE= 2V*

C

I

= 100mA, VCE= 2V*

C

I

= 500mA, VCE=2V*

C

I

= 1A, VCE=2 V*

C

I

= 2A, VCE=2V*

C

I

=4A, VCE= 2V*

C

210 MHz IC= 50mA, VCE=10V

f= 100MHz

10 pF VCB= 10V, f=1MHz

50 ns VCC=10 V, IC=1A

I

=100mA

275 ns

B1=IB2

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%