SOT323 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
DRAFT SPECIFICATION ISSUE A – OCTOBER 94
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (I
APPLICATIONS
* Ideally suited for space / weight critical applications
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
)
C
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
amb
-80 V
-60 V IC=-10mA*, IB=-0
-5 V
-100 nA VCB=-60V
-100 nA VCE=-60V
-100 nA VEB=-4V, IC=-0
-0.3
-0.6VV
-1.2 V IC=-1A, IB=-100mA*
-1.0 V IC=-1A, VCE=-5V*
ZUMT591
C
SOT323
-80 V
-60 V
-5 V
-2 A
-1 A
-200 mA
500 mW
-55 to +150 °C
I
=-100µA, IE=-0
C
I
=-100µA, IC=-0
E
IC=-500mA, IB=-50mA*
I
=-1A, IB=-100mA*
C
E
B
ZUMT591
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Static Forward Current
Transfer Ratio
Transition Frequency f
Ouput Capacitance C
h
FE
100
100
300
80
15
T
obo
150 MHz IC=-50mA, VCE=-10V*
10 pF VCB=-10V, f=1MHz
IC=-1mA, VCE=-5V*
I
=-500mA, VCE=-5V*
C
I
=-1A, VCE=-5V*
C
I
=-2A, VCE=-5V*
C
f=100MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle®2%
NOTE
This data is derived from development material and does not necessarily mean that the device will
go into production
© Zetex Semiconductors plc 2005
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SEMICONDUCTORS