Diodes ZTX951 User Manual
PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 4 JUNE 94
* 4 Amps continuous current
* Up to 15 Amps peak current
* Very low saturation voltage
* Excellent gain up to 10 Amps
* Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Practical Power Dissipation* P
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R ≤1KΩ
EBO
V
CE(sat)
V
BE(sat)
CBO
CEO
EBO
CM
C
totp
tot
j:Tstg
= 25°C unless otherwise stated)
amb
-55 to +200 °C
-100 -140 V
-100 -140 V
-60 -90 V IC=-10mA*
-6 -8 V
-50-1nA
µA
-50-1nA
µA
-10 nA VEB=-6V
-15
-60
-120
-220
-100
-160
-300
mV
mV
mV
mV
-50
-960 -1100 mV IC=-4A, IB=-400mA*
ZTX951
C
B
E
E-Line
TO92 Compatible
-100 V
-60 V
-6 V
-15 A
-4 A
1.58 W
1.2 W
=-100µA
I
C
µA, RB ≤1KΩ
IC=-1
=-100µA
I
E
V
=-80V
CB
V
=-80V, T
CB
V
CB
V
CB
I
=-100mA, IB=-10mA*
C
I
=-1A, IB=-100mA*
C
I
=-2A, IB=-200mA*
C
=-4A, IB=-400mA*
I
C
=-80V
=-80V, T
amb
amb
=100°C
=100°C
3-315
ZTX951
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
V
h
T
on
t
off
BE(on)
FE
obo
*Measured under pulsed conditions. Pulse width=300
-850 -1000 mV IC=-4A, VCE=-1V*
100
100
75
10
200
200
120
25
300
I
=-10mA, VCE=-1V*
C
I
=-1A, VCE=-1V*
C
I
=-4A, VCE=-1V*
C
=-10A, VCE=-1V*
I
C
120 MHz IC=-100mA, VCE=-10V
f=50MHz
74 pF VCB=-10V, f=1MHz
82
350
ns
ns
IC=-2A, IB1=-200mA
I
B2
µs. Duty cycle ≤2%
=200mA, VCC=-10V
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
4.0
)
s
tt
a
(W
3.0
tion
ipa
iss
D
ower
P
x
a
M
2.0
1.0
-40
-20 0 20
T -Temperature (°C)
Case te
mperatu
Ambien
t t
empe
rat
ure
40 60 80 100 120 200180160140
Derating curve
R
th(j-amb)
R
th(j-case)
150
t
1
100
r
e
50
Thermal Resistance (°C/W)
0
0.0001
0.001
150
50
D.C.
D=t
1/tP
t
P
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
Pulse Width (seconds)
°C/W
°C/W
10 10010.10.01
Maximum transient thermal impedance
3-316
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