Page 1
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 300 Volt V
* 3 Amps continuous current
* Up to 5 Amps peak current
* Very low saturation voltage
*P
tot
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Practical Power Dissipation* P
Power Dissipation at T
Operating and Storage Temperature Range T
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
CEO
= 1.2 Watt
=25°C P
amb
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R ≤1KΩ
EBO
V
CE(sat)
V
BE(sat)
CBO
CEO
EBO
CM
C
totp
tot
j:Tstg
= 25°C unless otherwise stated)
amb
-55 to +200 °C
330 475 V
330 475 V
300 350 V IC=10mA*
68 V
50
nA
1
µA
50
nA
1
µA
10 nA VEB=6V
50
100
140
200
250
mV
mV
mV
mV
80
140
170
870 1000 mV IC=2A, IB=200mA*
ZTX857
C
B
E
E-Line
TO92 Compatible
330 V
300 V
6V
5A
3A
1.58 W
1.2 W
=100µA
I
C
µA, RB ≤1KΩ
IC=1
=100µA
I
E
V
=300V
CB
V
=300V, T
CB
V
=300V
CB
=300V, T
V
CB
IC=0.5A, IB=50mA*
I
=1A, IB=100mA*
C
=2A, IB=200mA*
I
C
=3A, IB=600mA*
I
C
amb
amb
=100°C
=100°C
3-303
Page 2
ZTX857
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
h
BE(on)
FE
Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
T
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
810 950 mV IC=2A, VCE=5V*
100
100
15
200
200
25
15
300
I
I
I
I
80 MHz IC=100mA, VCE=10V
f=100MHz
11 pF VCB=20V, f=1MHz
100
5300
ns
IC=250mA, IB1=25mA
ns
I
µs. Duty cycle ≤2%
=10mA, VCE=5V
C
=500mA, VCE=10V*
C
=2A, VCE=10V*
C
=3A, VCE=10V*
C
=25mA, VCC=50V
B2
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
°C/W
°C/W
)
s
tt
a
(W
tion
ipa
iss
D
ower
P
x
a
M
4.0
3.0
2.0
1.0
-40
-20 0 20
T -Temperature (°C)
Case te
mperatu
Ambien
t t
empe
rat
ure
40 60 80 100 120 200180160140
r
e
Derating curve
150
100
50
Thermal Resistance (°C/W)
0
Maximum transient thermal impedance
0.0001
D.C.
t
1
D=t
1/tP
t
P
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
0.001
Pulse Width (seconds)
10 10010.10.01
3-304
Page 3
TYPICAL CHARACTERISTICS
ZTX857
0.8
0.6
olts)
- (V
0.4
at)
s
(
CE
V
0.2
0
0.001 0.01 0.1 1
2.0
olts)
1.5
V
(
-
(sat)
E
1.0
B
V
0.5
IC/IB=10
IC/IB=50
Collector Current (Amps)
IC -
CE(sat)
V
IC/IB=10
IC/IB=50
Collector Current (Amps)
IC -
BE(sat)
V
v IC
0.1
v IC
1.6
1.4
1.2
1.0
0.8
0.6
- Normalised Gain
0.4
FE
h
0.2
10
0
0
VCE=10V
VCE=2V
0.01 0.1
1
300
200
- Typical Gain
100
FE
h
10
IC - Collector Current (Amps)
hFEv IC
1
VCE=5V
100.00010.001 0.01
2.0
olts)
1.5
- (V
BE
V
1.0
1
100.0001
0.5
0.001 0.01
0.1
IC - Collector Current (Amps)
BE(on)
V
v IC
10
t (Amps)
1
n
D.C.
1s
0.1
100ms
- Collector Curre
C
I
10ms
0.01
VCE - Collector Voltage (Volts)
Single Pulse Test at T
1.0ms
0.1ms
1100010 1000.1
=25°C
amb
Safe Operating Area
3-305
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