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NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* 5 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltages
APPLICATIONS
* LCD backlight converter
* Flash gun converters
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Practical Power Dissipation* P
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltag
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
CBO
CER
R ≤1KΩ
EBO
V
CE(sat)
V
BE(sat)
CBO
CEO
EBO
CM
C
totp
tot
j:Tstg
= 25°C unless otherwise stated)
amb
-55 to +200 °C
80 120 V
80 120 V
30 40 V IC=10mA*
68 V
50
nA
1
µA
50
nA
1
µA
10 nA VEB=6V
25
50
110
180
100
200
220
mV
mV
mV
mV
50
930 1050 mV IC=5A, IB=200mA*
ZTX849
C
B
E
E-Line
TO92 Compatible
80 V
30 V
6V
20 A
5A
1.58 W
1.2 W
=100µA
I
C
µA, RB ≤1KΩ
IC=1
=100µA
I
E
=70V
V
CB
V
=70V, T
CB
V
=70V
CB
V
=70V, T
CB
I
=0.5A, IB=20mA*
C
I
=1A, IB=20mA*
C
=2A, IB=20mA*
I
C
I
=5A, IB=200mA*
C
amb
amb
=100°C
=100°C
3-291
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ZTX849
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
h
BE(on)
FE
Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
T
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
850 950 mV IC=5A, VCE=1V*
100
100
100
30
200
200
170
65
300
I
I
I
I
100 MHz IC=100mA, VCE=10V
f=50MHz
75 pF VCB=10V, f=1MHz*
45
630
ns
ns
IC=1A, IB!=100mA
I
µs. Duty cycle ≤2%
=10mA, VCE=1V
C
=1A, VCE=1V*
C
=5A, VCE=1V*
C
=20A, VCE=1V*
C
=100mA, VCC=10V
B2
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
°C/W
°C/W
)
s
tt
a
(W
tion
ipa
iss
D
ower
P
x
a
M
4.0
3.0
2.0
1.0
-40
-20 0 20
T -Temperature (°C)
Case te
mperatu
Ambien
t t
empe
rat
ure
40 60 80 100 120 200180160140
r
e
Derating curve
150
100
50
Thermal Resistance (°C/W)
0
Maximum transient thermal impedance
0.0001
D.C.
t
1
D=t
1/tP
t
P
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
0.001
Pulse Width (seconds)
10 10010.10.01
3-292
Page 3
TYPICAL CHA R ACTERI STICS
ZTX849
0.8
0.6
olts)
- (V
)
t
0.4
(sa
CE
V
0.2
0
0.01 0.1 1 10
IC/IB=10
IC/IB=50
IC - Collector Current (Amps)
CE(sat)
V
2.0
olts)
- (V
at)
s
(
BE
V
1.5
1.0
0.5
0.01 0.1
IC/IB=10
IC/IB=50
IC - Collector Current (Amps)
BE(sat)
V
v IC
v IC
100
n
i
Ga
ised
l
- Norma
E
F
h
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1
VCE=5V
VCE=1V
10
1
100
100
300
200
- Typical Gain
FE
h
IC - Collector Current (Amps)
hFEv IC
10
VCE=1V
1000.001
2.0
olts)
1.5
V
(
-
E
B
V
1.0
1
1000.001
10
0.5
0.01 0.1
Collector Current (Amps)
IC -
BE(on)
V
1
v IC
100
Single Pulse Test at T
amb
ps)
Am
(
nt
10
e
r
Cur
r
to
D.C.
c
1s
le
l
100ms
1
10ms
Co
-
C
I
1.0ms
0.1ms
0.1
0.1 100110
CE
Collector Voltage (Volts)
V
-
Safe Operating Area
=25°C
3-293
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