Diodes ZTX789A User Manual

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR

ISSUE 2  APRIL 94

FEATURES
* 25 Volt V
* Gain of 200 at IC=2 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Practical Power Dissipation* P

Power Dissipation at T

Operating and Storage Temperature Range T

*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

CEO

=25°C

amb

derate above 25°C

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

CBO

CEO

EBO

CM

C

totp

P

tot

j:Tstg

= 25°C)

amb

-25 V

-25 V IC=-10mA*

-5 V

-0.1

-0.1

-0.25

-0.45

-0.5

-1.0 V IC=-1A, IB=-10mA*

-0.8 V IC=-1A, VCE=-2V*

300

800 I
250
200
100

3-276

ZTX789A

C
B
E

E-Line

TO92 Compatible

-25 V

-25 V

-5 V

-8 A

-3 A

1.5 W

1

5.7

-55 to +200 °C

=-100µA

I

C

=-100µA

I

E

V

µA
µA

V
V
V

CB

V

EB

I

=-1A, IB=-10mA*

C

I

=-2A, IB=-20mA*

C

=-3A, IB=-100mA*

I

C

=-10mA, VCE=-2V

C

=-1A, VCE=-2V*

I

C

I

=-2A, VCE=-2V*

C

=-6A, VCE=-2V*

I

C

mW/°C

=-15V

=-4V

W

ZTX789A

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition Frequency f

Input Capacitance C

Output Capacitance C

Switching Times t

T

ibo

obo

on

t

off

*Measured under pulsed conditions. Pulse width=300

100 MHz IC=-50mA, VCE=-5V

f=50MHz

225 pF VEB=-0.5V, f=1MHz

25 pF VCB=-10V, f=1MHz

35
400

ns

IC=-500mA, IB1=-50mA

ns

I

=-50mA, VCC=-10V

B2

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance: Junction to Ambient

Junction to Ambient
Junction to Case

1
2

R

th(j-amb)1

R

th(j-amb)2

R

th(j-case)



 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

175
116

70

°C/W
°C/W
°C/W

2.5

tts)

a

2.0

W

(

­n

o

1.5

issipati

1.0

D

r
we

0.5

ax Po

0

M

-40 0.0001

T -Temperature (°C)

Case temperature

Ambient temperat

ure

40 60 80 100 120 200180160140

Derating curve

3-277

200

100

Thermal Resistance (°C/W)

D=1 (D.C.)

t

1

D=t

1/tP

t

P

D=0.5

D=0.2
D=0.1

Single Pulse

0

0.001

Pulse Width (seconds)

Maximum transient thermal impedance

10 10010.10.01-20 0 20