Diodes ZTX757 User Manual
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
ZTX756
ZTX757
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
= 1 Watt
*P
tot
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL ZTX756 ZTX757 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
CM
C
T
CBO
CEO
EBO
tot
j:Tstg
-200 -300 V
-200 -300 V
-5 V
-1 A
-0.5 A
1W
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX756 ZTX757 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
-200 -300 V
I
=-100µA, I
C
-200 -300 V IC=-10mA, IB=0*
-5 -5 V
-100
-100nAnA
=-100µA, I
I
E
VCB=-160V, IE=0
=-200V, IE=0
V
CB
-100 -100 nA VEB=-3V, IC=0
-0.5 -0.5 V IC=-100mA,
=-10mA*
I
B
-1.0 -1.0 V IC=-100mA,
I
=-10mA*
B
-1.0 -1.0 V IC=-100mA, VCE=-5V*
50
40
50
40
IC=-100mA, VCE=-5V*
=-10mA, VCE=-5V*
I
C
30 30 MHz IC=-10mA, VCE=-20V
f=20MHz
20 20 pF VCB=-20V, f=1MHz
3-265
=0
E
=0
C
ZTX756
ZTX757
250
V)
200
m
(
-
(sat)
E
150
C
V
100
100
)
80
60
Gain (%
d
ise
40
mal
r
o
N
20
-
FE
h
0
TYPICAL CHARACTERISTICS
IC/IB=10
0.0001
0.001
0.01 0.1
IC - Collector Current (Amps)
CE(sat)
V
0.0001
0.001
v IC
VCE=5V
0.01 0.1
1
1
td
tr
ts
tf
µs
µs
4
1.6
1.4
3
1.2
e
1.0
0.8
2
0.6
1
0.4
Switching tim
0.2
0
0.01
1.2
1.0
olts)
0.8
- (V
)
t
(sa
0.6
BE
V
0.4
ts
td
tf
tr
0.1
IC - Collector Current (Amps)
Switching Speeds
IC/IB=10
0.0001
0.001
0.01 0.1
IB1=IB2=IC/10
VCE=10V
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFEv IC V
BE(sat)
v IC
tf
tr
ts
td
1
1
olts)
- (V
E
B
V
1.2
1.0
0.8
0.6
0.4
0.0001
IC - Collector Current (Amps)
BE(on)
V
VCE=5V
0.001
0.01 0.1
v IC
1.0
0.1
0.01
- Collector Current (Amps)
C
I
1
0.001
3-266
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
300µs
1100010 100
VCE - Collector Voltage (Volts)
ZTX756
ZTX757
amb
Safe Operating Area
=25°C
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