Diodes ZTX749 User Manual

PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 1  APRIL 94

FEATURES
* 25 Volt V
* 2 Amp continuous current
* Low saturation voltage

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

CEO

derate above 25°C

amb

=25°C

CM

C

P

CBO

CEO

EBO

tot

j:Tstg

ZTX749

C
B
E

E-Line

TO92 Compatible

-35 V

-25 V

-5 V

-6 A

-2 A

1

5.7

-55 to +200 °C

mW/ °C

W

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

*Measured under pulsed conditions. Pulse width=300

-35 V

=-100µA, I

I

C

-25 V IC=-10mA, IB=0*

-5 V

-0.1

-10

-0.1

-0.12

-0.23

-0.3

-0.5VV

µA
µA

µA

=-100µA, I

I

E

V

=-30V

CB

=-30V,T

V

CB

V

=-4V, IE=0

EB

IC=1A, IB=-100mA*
I

=2A, IB=-200mA*

C

-0.9 -1.25 V IC=1A, IB=-100mA*

-0.8 -1 V IC=-1A, VCE=-2V*

70
100
75
15

200
200

300
150
50

µs. Duty cycle ≤2%

=-50mA, VCE=-2V*

I

C

=-1A, VCE=-2V*

I

C

I

=-2A, VCE=-2V*

C

=-6A, VCE=-2V*

I

C

3-254

E

C

amb

=0

=0

=100°C

ZTX749

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition
Frequency

Output Cpacitance C

Switching Times t

f

T

obo

on

off

*Measured under pulsed conditions. Pulse width=300

100 160 MHz IC=-100mA,

V

=-5V f=100MHz

CE

55 100 pF VCB=-10V f=1MHz

40 ns IC=-500mA,

=-10V

V

CC

I

450 ns

B1=IB2

=-50mAt

µs. Duty cycle ≤ 2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

Junction to Ambient
Junction to Case

2

R

1

th(j-amb)1

R

th(j-amb)2

R

th(j-case)



 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

175
116

70

°C/W
°C/W
°C/W

2.5

tts)

a

2.0

W

(

­n

o

1.5

issipati

1.0

D

r
we

0.5

ax Po

0

M

-40 0.0001

T -Temperature (°C)

Case temperature

Ambient temperat

ure

40 60 80 100 120 200180160140

Derating curve

3-255

200

100

Thermal Resistance (°C/W)

D=1 (D.C.)

t

1

D=t

1/tP

t

P

D=0.5

D=0.2
D=0.1

Single Pulse

0

0.001

Pulse Width (seconds)

Maximum transient thermal impedance

10 10010.10.01-20 0 20