Diodes ZTX718 User Manual
PNP SILICON PLANAR MEDIUM POWER
C
B
E
E-Line
TO92 Compatible
HIGH GAIN TRANSISTOR
ISSUE 4– MAY 1998
FEATURES
* 6A Peak pulse current
* Excellent h
* low saturation voltage
*I
Cont 2.5A
C
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX618
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
characteristics up to 6A (pulsed)
FE
ZTX718
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Practical Power Dissipation* P
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
B
totp
tot
j:Tstg
-55 to +200 °C
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
-20 V
-20 V
-5 V
-6 A
-2.5 A
-500 mA
1.5 W
1W
ZTX718
ELECTRIAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
-20 -65 V
I
=-100µA
C
-20 -55 V IC=-10mA*
-5 -8.8 V
I
=-100µA
E
-100 nA VCB=-15V
-100 nA VEB=-4V
-16
-130
-145
-190
-100 nA V
-40
-200
-220
-260
mV
mV
mV
mV
=-15V
CES
IC=-0.1A, IB=-10mA*
I
=-1A, IB=-20mA*
C
I
=-1.5A, IB=-50mA*
C
I
=-2.5A, IB=-200mA*
C
-0.98 -1.1 V IC=-2.5A, IB=-200mA*
-0.85 -0.95 V IC=-2.5A, VCE=-2V*
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
h
f
FE
T
obo
(on)
(off)
300
300
150
35
15
475
450
230
70
30
150 180 MHz IC=-50mA, VCE=-10V
21 30 pF VCB=-10V, f=1MHz
40 ns VCC=-10V, IC=-1A
670 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC=-10mA, VCE=-2V*
I
=-100mA, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-4A, VCE=-2V*
C
I
=-6A, VCE=-2V*
C
f=100MHz
I
=20mA
B1=IB2
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