Diodes ZTX705 User Manual
PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 3 MAY 94
ZTX704
ZTX705
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 3K at I
=1 Watt
*P
tot
APPLICATIONS
* Lamp, solenoid and relay drivers
=1 Amp
C
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL ZTX704 ZTX705 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
derate above 25°C
amb
= 25°C
Operating and Storage Temperature
Range
CM
C
P
T
CBO
CEO
EBO
tot
j:Tstg
-120 -140 V
-100 -120 V
-10 V
-4 A
-1 A
1
5.7
mW/ °C
-55 to +200 °C
W
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
-120 -140 V
=-100µA
I
C
-100 -120 V IC=-10mA*
-10 -10 V
-0.1
-0.1
-10
-10
-10 -10
-0.1 -0.1
-1.3
-2.5
-1.3
-2.5VV
I
V
µA
V
µA
V
µA
V
µA
V
µA
V
µA
IC=-1A, IB=-1mA*
I
=-100µA
E
=-100V
CB
=-120V
CB
=-100V, T
CB
=-120V, T
CB
=-80V
CES
=-8V
EB
=-2A, IB=-2mA*
C
-1.8 -1.8 V IC=-1A, IB=-10mA*
-1.7 -1.7 V IC=-1A, VCE=-5V*
3-250
amb
amb
=100°C
=100°C
ZTX704
ZTX705
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PAR AMETE R SYMBOL ZTX704 ZTX705 UNIT CONDI TI ONS.
MIN. MAX. MIN. MAX.
µs
µs
RS= 22K
I
=-10mA, VCE=-5V*
C
I
=-100mA, VCE=-5V*
C
=-1A, VCE=-5V*
I
C
I
=-2A, VCE=-5V*
C
f=20MHz
I
=-0.5A, VCE=-10V
C
=-0.5mA
I
B1=IB2
Ω
Static Forward
Current Transfer
Ratio
Transition
Frequency
Input Capacitance C
Output Capacitance C
Switching Times t
h
FE
f
T
ibo
obo
on
t
off
3K
3K
3K2K30K
160 Typical 160 Typical MHz IC=-100mA, VCE=-10V
90 Typical 90 Typical pF VEB=-0.5V, f=1MHz
15 Typical 15 Typical pF VCE=-10V, f=1MHz
0.6 Typical 0.6 Typical
0.8 Typical 0.8 Typical
*Measured under pulsed conditions. Pulse width=300
1.0
0.8
0.6
0.4
0.2
RS= 100K
RS= 1M
RS=
Ω
Ω
∞
DC Conditions
3K
3K
3K2K30K
µs. Duty cycle ≤2%
0
Maximum Power Dissipation (W)
110100
V
- Collector-Emitter Voltage (Volts)
CE
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T
amb(max
T
= Maximum operating ambient temperature
amb(max )
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
and source resistance (RS)
CE
Power(actual)= Actual power dissipation in users circuit
Power(max ) − Power(act)
=
)
0.0057
3-251
+25° C
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