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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 180 Volt V
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
* Motor drivers
* Relay / solenoid drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Practical Power Dissipation * P
Power Dissipation at T
Operating and Storage Temperature Range T
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
CEO
=25°C
amb
derate above 25°C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
CBO
CEO
EBO
CM
C
totp
P
tot
j:Tstg
= 25°C)
amb
180 V
180 V IC=10mA*
5V
0.1
0.1
0.2
0.2
0.25
0.9 V IC=200mA, IB=5mA*
0.9 V IC=200mA, VCE=5V*
500
150
3-247
ZTX696B
C
B
E
E-Line
TO92 Compatible
180 V
180 V
5V
1A
0.5 A
1.5 W
1
5.7
-55 to +200 °C
=100µA
I
C
I
=100µA
E
V
µA
µA
V
V
V
=145V
CB
V
=4V
EB
I
=50mA, IB=0.5mA*
C
I
=100mA, IB=2mA*
C
I
=200mA, IB=5mA*
C
IC=100mA, VCE=5V*
I
=200mA, VCE=5V*
C
W
mW/°C
Page 2
ZTX696B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
70 MHz IC=50mA, VCE=5V
f=50MHz
200 pF VEB=0.5V, f=1MHz
6pFV
80
4400
µs. Duty cycle ≤2%
ns
ns
=10V, f=1MHz
CE
IC=100mA, IB!=10mA
I
=10mA, VCC=50V
B2
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
Junction to Ambient
Junction to Case
2
1
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
175
116
70
°C/W
°C/W
°C/W
3-248
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TYPICAL CHARACTERISTICS
ZTX696B
olts)
- (V
at)
s
(
CE
V
n
i
Ga
ised
mal
r
- No
E
F
h
olts)
- (V
BE
V
IC/IB=100
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
IC/IB=50
IC/IB=10
0.01 0.1 1 10
Collector Current (Amps)
IC -
CE(sat)
V
+100°C
+25°C
-55°C
0.01 0.1
v IC
1
T
amb
VCE=5V
=25°C
10
1.5K
1K
500
olts)
- (V
cal Gain
i
at)
yp
T
-
E
F
h
olts)
- (V
)
t
sa
(
CE
V
s
(
BE
V
-55°C
0.8
0.6
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC -
CE(sat)
V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
v IC
IC/IB=50
IC/IB=50
IC - Collector Current (Amps) IC - Collector Current (Amps)
BE(sat)
v IC
Single Pulse Test at T
1.0ms
0.1ms
=25°C
amb
Safe Operating Area
-55°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
+25°C
+100°C
+175°C
0
0.01 0.1 1 10
IC - Collector Current (Amps)
BE(on)
V
hFEv IC V
1
VCE=5V
0.1
D.C.
1s
100ms
10ms
0.01
- Collector Current (Amps)
C
I
0.001
1100010 100
VCE - Collector Voltage (Volts)
v IC
3-249
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