Diodes ZTX694B User Manual
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 APRIl 94
FEATURES
* 120 Volt V
* Gain of 400 at IC=200mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Practical Power Dissipation* P
Power Dissipation T
Operating and Storage Temperature Range T
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
CEO
derate above 25°C
amb
=25°C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
CBO
CEO
EBO
CM
C
totp
P
tot
j:Tstg
= 25°C)
amb
120 V
120 V IC=10mA*
5V
0.1
0.1
0.25
0.5VV
0.9 V IC=1A, IB=10mA*
0.9 V IC=1A, VCE=2V*
500
400
150
ZTX694B
C
B
E
E-Line
TO92 Compatible
120 V
120 V
5V
1A
0.5 A
1.5 W
1
5.7
-55 to +200 °C
=100µA
I
C
=100µA
I
E
V
V
=100V
CB
=4V
EB
µA
µA
IC=100mA, IB=0.5mA*
I
=400mA, IB=5mA*
C
I
=100mA, VCE=2V
C
IC=200mA, VCE=2V*
=400mA, VCE=2V*
I
C
W
mW/°C
*
3-244
ZTX694B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
130 MHz IC=50mA, VCE=5V
f=50MHz
200 pF VEB=0.5V, f=1MHz
9pFV
80
2900
ns
ns
=10V, f=1MHz
CB
IC=100mA, IB!=10mA
I
=10mA, VCC=50V
B2
µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
Junction to Ambient
Junction to Case
2
1
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
116
70
175
°C/W
°C/W
°C/W
2.5
tts)
a
2.0
W
(
n
o
1.5
issipati
1.0
D
r
we
0.5
ax Po
0
M
-40 0.0001
T -Temperature (°C)
Case temperature
Ambient temperat
ure
40 60 80 100 120 200180160140
Derating curve
3-245
200
100
Thermal Resistance (°C/W)
D=1 (D.C.)
t
1
D=t
1/tP
t
P
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.001
Pulse Width (seconds)
Maximum transient thermal impedance
10 10010.10.01-20 0 20
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