Page 1
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 – APRIL 2002
FEATURES
* 400 Volt V
* 0.5 Amp continuous current
*P
tot
CEO
=1 Watt
ZTX658
APPLICATIONS
* Telephone dialler circuits
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
derate above 25°C
amb
=25°C
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
P
tot
j:Tstg
= 25°C unless otherwise stated).
400 V
400 V
5V
1A
500 mA
1
5.7
mW/ °C
-55 to +200 °C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO)
V
(BR)EBO
I
CBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
400 V
=100µA
I
C
400 V IC=10mA*
5V
I
=100µA
E
100 nA VCB=320V
100 nA VCE=320V
100 nA VEB=4V
0.3
0.25
0.5
V
V
V
IC=20mA, IB=1mA
I
=50mA, IB=5mA*
C
I
=100mA, IB=10mA*
C
0.9 V IC=100mA, IB=10mA*
0.9 V IC=100mA, VCE=5V*
50
50
40
IC=1mA, VCE=5V*
I
=100mA, VCE=5V*
C
I
=200mA, VCE=10V*
C
W
3-229
Page 2
ZTX658
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
Output capcitance C
Switching times t
T
obo
on
t
off
* Measured under pulsed conditions. Pulse width=300
50 MHz IC=20mA, VCE=20V
f=20MHz
10 pF VCB=20V, f=1MHz
130
3300
nsnsIC=100mA, VC=100V
I
=10mA, IB2=-20mA
B1
µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
Junction to Ambient
Junction to Case
2
R
1
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
†
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
tts)
a
2.0
W
(
n
o
i
1.5
sipat
is
1.0
D
r
e
w
0.5
ax Po
0
M
-40 0.0001
Case temperature
A
m
bient tem
perat
40 60 80 100 120 200180160140
u
re
T -Temperature (°C)
200
t
1
100
Thermal Resistance (°C/W)
0
0.001
175
116
70
D=1 (D.C.)
D=t
1/tP
t
P
D=0.5
D=0.2
D=0.1
Single Pulse
Pulse Width (seconds)
°C/W
°C/W
°C/W
10 10010.10.01-20 0 20
Derating curve
Maximum transient thermal impedance
3-230
Page 3
TYPICAL CHARACTERISTICS
ZTX658
olts)
- (V
)
at
s
(
CE
V
n
i
Ga
ised
l
ma
r
- No
E
F
h
olts)
V
(
-
E
B
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
IC/IB=10
IC/IB=20
IC/IB=50
0.01 0.1 20110
T
=25°C
amb
olts)
V
(
-
at)
(s
E
C
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
IC - Collector Current (Amps)
CE(sat)
V
0
0.001
+100°C
+25°C
-55°C
0.01 0.1 20110
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
v IC
VCE=10V
300
200
100
in
cal ga
i
yp
T
-
E
F
h
olts)
- (V
)
at
s
(
BE
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-55°C
+25°C
+100°C
+175°C
0.01 0.1 20110
IC - Collector Current (Amps)
CE(sat)
0
0.001
V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 20110
v IC
IC/IB=10
IC/IB=10
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFEv IC V
1.0
-55°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC -
BE(on)
V
v IC
VCE=10V
0.1
urrent (Amps)
C
D.C.
r
1s
to
c
100ms
10ms
le
l
0.01
o
C
-
C
I
0.001
1.0ms
0.1ms
V
BE(sat)
v IC
Single Pulse Test at T
CE
Collector Voltage (Volts)
-
=25°C
amb
100110
Safe Operating Area
1000
3-231
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