Diodes ZTX657 User Manual
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
ZTX656
ZTX657
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
=1 Watt
*P
tot
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL ZTX656 ZTX657 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
200 300 V
200 300 V
5V
1A
0.5 A
1W
-55 to +200 °C
ZTX656 ZTX657
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Ratio
Transition
Frequency
f
T
MIN. MAX. MIN. MAX.
200 300 V
200 300 V IC=10mA, IB=0*
55V
100
100 100 nA VEB=3V, IC=0
0.5 0.5 V IC=100mA, IB=10mA*
11VI
1 1 V IC=100mA, VCE=5V*
50
40
50
40
30 30 MHz IC=10mA, VCE=20V
UNIT CONDITIONS.
100nAnA
I
=100µA, I
C
I
=100µA, I
E
=0
E
=0
C
VCB=160V, IE=0
V
=200V, IE=0
CB
=100mA, IB=10mA*
C
IC=100mA, VCE=5V
=10mA, VCE=5V
I
C
f=20MHz
3-227
ZTX656
ZTX657
TYPICAL CHARACTERISTICS
1.8
1.6
1.4
1.2
olts)
1.0
- (V
0.8
)
t
sa
(
0.6
CE
0.4
V
0.2
0
0.01
Collector Current (Amps)
IC -
V
1.2
)
lts
1.0
o
V
(
-
0.8
(sat)
E
B
V
0.6
0.4
IC/IB=10
0.01
IC - Collector Current (Amps)
V
1
0.1
0.01
- Collector Current (Amps)
C
I
0.001
1 100010 100
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
300µs
VCE - Collector Voltage (Volts)
Safe Operating Area
IC/IB=10
0.1
CE(sat)
BE(sat)
v IC
v IC
X
ZT
X
ZT
100
)
%
80
(
n
i
60
Ga
ised
40
mal
r
No
20
-
E
F
h
101
0
0.01
VCE=5V
100.1 1
IC - Collector Current (Amps)
hFEv IC
1.2
0.01
VCE=5V
100.1 1
1.0
)
olts
V
(
0.8
-
E
B
V
0.6
100.1 1
0.4
IC - Collector Current (Amps)
BE(on)
V
v IC
=25°C
amb
td
tr
tf
µs
1.4
ts
1.2
1.0
0.8
0.6
0.4
Switching time
6
5
6
7
65
0.2
0
0.01
tf
td
tr
0.1
IB1=IB2=IC/10
VCE=10V
ts
µs
3
2
1
0
1
IC - Collector Current (Amps)
Switching Speeds
3-228
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