Page 1
NPN SILICON PLANAR
ZTX652 Not Recommended for
New Design Please Use ZTX653
MEDIUM POWER TRANSISTORS
ZTX652
ZTX653
ISSUE 2 JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
=1 Watt
*P
tot
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX652 ZTX653 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C
amb
derate above 25°C
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
ZTX652 ZTX653
PARAMETER SYMBOL
MIN. TYP. MAX. MIN. TYP. MAX.
CBO
CEO
EBO
CM
C
P
tot
j:Tstg
= 25°C unless otherwise stated).
100 120 V
80 100 V
5V
6A
2A
1
5.7
mW/°C
-55 to +200 °C
UNIT CONDITIONS.
W
Collector-Base
Breakdown
V
(BR)CBO
Voltage
Collector-Emitter
Breakdown
V
(BR)CEO
Voltage
Emitter-Base
Breakdown
V
(BR)EBO
Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I
I
V
V
V
CBO
EBO
CE(sat)
BE(sat)
BE(on)
100 120 V
I
=100µA
C
80 100 V IC=10mA*
55V
0.1
0.1
10
10
0.1 0.1
0.13
0.23
0.3
0.5
0.13
0.23
0.3
0.5VV
I
E
V
µA
V
µA
V
µA
VCB=100V,T
µA
V
µA
IC=1A, IB=100mA*
I
C
=100µA
=80V
CB
=100V
CB
=80V,T
CB
EB
amb
amb
=4V
=2A, IB=200mA*
0.9 1.25 0.9 1.25 V IC=1A, IB=100mA*
0.8 1 0.8 1 V IC=1A, VCE=2V*
3-222
=100°C
=100°C
Page 2
ZTX652
ZTX652 Not Recommended for
New Design Please Use ZTX653
ZTX653
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
ZTX652 ZTX653
PARAMETER SYMBOL
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
Switching Times t
Output Capacitance C
f
T
on
t
off
obo
*Measured under pulsed conditions. Pulse width=300
140 175 140 175 MHz IC=100mA, VCE=5V
f=100MHz
80 80 ns IC=500mA, VCC=10V
=50mA
I
1200 1200 ns
B1=IB2
30 30 pF VCB=10V f=1MHz
µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient
Junction to Ambient
Junction to Case
1
2
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
175
116
70
°C/W
°C/W
°C/W
2.5
tts)
a
2.0
W
(
n
o
1.5
issipati
1.0
D
r
we
0.5
ax Po
0
M
-40 0.0001
Case temperature
Ambient temperat
40 60 80 100 120 200180160140
T -Temperature (°C)
Derating curve
ure
3-223
200
100
Thermal Resistance (°C/W)
D=1 (D.C.)
t
1
D=t
1/tP
t
P
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.001
Pulse Width (seconds)
Maximum transient thermal impedance
10 10010.10.01-20 0 20
Page 3
ZTX652
ZTX652 Not Recommended for
New Design Please Use ZTX653
ZTX653
0.6
0.5
0.4
olts)
0.3
- (V
)
t
sa
0.2
(
CE
V
0.1
0
TYPICAL CHARACTERISTICS
IC/IB=10
0.0010.0001
0.01
0.1
IC - Collector Current (Amps)
CE(sat)
V
v IC
225
175
Gain
-
125
FE
h
75
101
25
0.01
VCE=2V
100.1 1
IC - Collector Current (Amps)
hFEv IC
1.4
1.2
olts)
- (V
1.0
at)
s
(
BE
0.8
V
0.6
0.001
0.0001
IC - Collector Current (Amps)
V
10
1
0.1
- Collector Current (Amps)
C
I
0.01
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
100µs
0.1
1 10 100
VCE - Collector Voltage (Volts)
Safe Operating Area
IC/IB=10
0.01
BE(sat)
v IC
1.2
1.0
)
lts
o
V
0.8
(
-
E
B
V
0.6
100.1 1
0.4
0.0001
VCE=2V
0.001
0.01
100.1 1
IC - Collector Current (Amps)
BE(on)
V
v IC
=25°C
amb
2
5
6
X
ZT
3
5
6
X
ZT
td
tr
tf
ts
ns
ns
280
2800
240
2400
2000
200
1600
160
1200
120
800
80
Switching time
400
40
0
0
0.01
IB1=IB2=IC/10
ts
tf
td
tr
0.1
1
IC - Collector Current (Amps)
Switching Speeds
3-224
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