Diodes ZTX653 User Manual

NPN SILICON PLANAR

ZTX652 Not Recommended for
New Design Please Use ZTX653

MEDIUM POWER TRANSISTORS

ZTX652
ZTX653

ISSUE 2  JULY 94

FEATURES
* 100 Volt V

CEO

* 2 Amp continuous current
* Low saturation voltage

=1 Watt

*P

tot

C
B
E

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL ZTX652 ZTX653 UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

=25°C

amb

derate above 25°C

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

ZTX652 ZTX653

PARAMETER SYMBOL

MIN. TYP. MAX. MIN. TYP. MAX.

CBO

CEO

EBO

CM

C

P

tot

j:Tstg

= 25°C unless otherwise stated).

100 120 V

80 100 V

5V

6A

2A

1

5.7

mW/°C

-55 to +200 °C

UNIT CONDITIONS.

W

Collector-Base
Breakdown

V

(BR)CBO

Voltage

Collector-Emitter
Breakdown

V

(BR)CEO

Voltage

Emitter-Base
Breakdown

V

(BR)EBO

Voltage

Collector Cut-Off
Current

Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

I

I

V

V

V

CBO

EBO

CE(sat)

BE(sat)

BE(on)

100 120 V

I

=100µA

C

80 100 V IC=10mA*

55V

0.1

0.1

10

10

0.1 0.1

0.13

0.23

0.3

0.5

0.13

0.23

0.3

0.5VV

I

E

V

µA

V

µA

V

µA

VCB=100V,T

µA

V

µA

IC=1A, IB=100mA*
I

C

=100µA

=80V

CB

=100V

CB

=80V,T

CB

EB

amb

amb

=4V

=2A, IB=200mA*

0.9 1.25 0.9 1.25 V IC=1A, IB=100mA*

0.8 1 0.8 1 V IC=1A, VCE=2V*

3-222

=100°C

=100°C

ZTX652

ZTX652 Not Recommended for
New Design Please Use ZTX653

ZTX653

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

ZTX652 ZTX653

PARAMETER SYMBOL

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Transition
Frequency

Switching Times t

Output Capacitance C

f

T

on

t

off

obo

*Measured under pulsed conditions. Pulse width=300

140 175 140 175 MHz IC=100mA, VCE=5V

f=100MHz

80 80 ns IC=500mA, VCC=10V

=50mA

I

1200 1200 ns

B1=IB2

30 30 pF VCB=10V f=1MHz

µs. Duty cycle ≤ 2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance: Junction to Ambient

Junction to Ambient
Junction to Case

1
2

R

th(j-amb)1

R

th(j-amb)2

R

th(j-case)



 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

175
116

70

°C/W
°C/W
°C/W

2.5

tts)

a

2.0

W

(

­n

o

1.5

issipati

1.0

D

r
we

0.5

ax Po

0

M

-40 0.0001

Case temperature

Ambient temperat

40 60 80 100 120 200180160140

T -Temperature (°C)

Derating curve

ure

3-223

200

100

Thermal Resistance (°C/W)

D=1 (D.C.)

t

1

D=t

1/tP

t

P

D=0.5

D=0.2
D=0.1

Single Pulse

0

0.001

Pulse Width (seconds)

Maximum transient thermal impedance

10 10010.10.01-20 0 20