Diodes ZTX649 User Manual

NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 2  APRIL 94

FEATURES
* 25 Volt V
* 2 Amp continuous current
* Low saturation voltage
*P
APPLICATIONS
* Motor driver
* DC-DC converters

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

=1 Watt

tot

CEO

derate above 25°C

amb

=25°C

CM

C

P

CBO

CEO

EBO

tot

j:Tstg

ZTX649

C
B
E

E-Line

TO92 Compatible

35 V

25 V

5V

6A

2A

1

5.7

-55 to +200 °C

mW/ °C

W

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

35 V

=100µA

I

C

25 V IC=10mA*

5V

0.12

0.23

0.1
10

0.1

0.3

0.5

µA
µA

µA

V
V

I

=100µA

E

V

=30V

CB

=30V,T

V

CB

V

EB

amb

=4V

IC=1A, IB=100mA*

=2A, IB=200mA*

I

C

0.9 1.25 V IC=1A, IB=100mA*

0.8 1 V IC=1A, VCE=2V*

70
100
75
15

200
200
150
50

300

I

=50mA, VCE=2V*

C

=1A, VCE=2V*

I

C

I

=2A, VCE=2V*

C

=6A, VCE=2V*

I

C

150 240 MHz IC=100mA, VCE=5V

f=100MHz

3-216

=100°C

ZTX649

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Output Capacitance C

Switching Times t

obo

on

t

off

*Measured under pulsed conditions. Pulse Width=300

25 50 pF VCB=10V f=1MHz

55 ns IC=500mA, VCC=10V

I

=50mA

300 ns

B1=IB2

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMET ER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

Junction to Ambient
Junction to Case

2

R

1

th(j-amb)1

R

th(j-amb)2

R

th(j-case)



 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

175
116

70

°C/W
°C/W
°C/W

2.5

tts)

a

2.0

W

(

­n

o

1.5

issipati

1.0

D

r
we

0.5

ax Po

0

M

-40 0.0001

T -Temperature (°C)

Case temperature

Ambient temperat

ure

40 60 80 100 120 200180160140

Derating curve

3-217

200

100

Thermal Resistance (°C/W)

D=1 (D.C.)

t

1

D=t

1/tP

t

P

D=0.5

D=0.2
D=0.1

Single Pulse

0

0.001

Pulse Width (seconds)

Maximum transient thermal impedance

10 10010.10.01-20 0 20