Diodes ZTX618 User Manual
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 JULY 1995
FEATURES
* 10A Peak pulse current
* Excellent h
* Extremely low saturation voltage e.g. 7mV typ.
cont 3.5A
*I
C
APPLICATIONS
* Power MOSFET gate driver in conjunction with
complementary ZTX718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Practical Power Dissipation* P
Power Dissipation P
Operating and Storage Temperature Range T
characteristics up to10A (pulsed)
FE
CBO
CEO
EBO
CM
C
B
totp
tot
j:Tstg
ZTX618
C
B
E
E-Line
TO92 Compatible
20 V
20 V
5V
10 A
3.5 A
500 mA
1.5 W
1W
-55 to +200 °C
* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX618
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
20 100 V
=100µA
I
C
20 27 V IC=10mA*
58.3 V
=100µA
I
E
100 nA VCB=16V
100 nA VEB=4V
7
80
210
100 nA V
mV
15
mV
150
mV
255
=16V
CES
I
=0.1A, IB=10mA*
C
I
=1A, IB=10mA*
C
=3.5A, IB=50mA*
I
C
0.93 1.05 V IC=3.5A, IB=50mA*
0.86 1.0 V IC=3.5A, VCE=2V*
200
300
170
40
400
450
300
85
I
=10mA, VCE=2V*
C
=200mA, VCE=2V*
I
C
=3A, VCE=2V*
I
C
I
=10A, VCE=2V*
C
100 140 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance C
Turn-On Time t
Turn-Off Time t
obo
(on)
(off)
*Measured under pulsed conditions. Pulse width=300
23 30 pF VCB=10V, f=1MHz
170 ns VCC=10V, IC=1A
=-IB2=10mA
I
B1
400 ns
µs. Duty cycle ≤ 2%
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