Diodes ZTX614 User Manual
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 100 Volt V
* 800 mA continuous current
* Gain of 10K at I
*P
tot
REFER TO BCX38 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=1 Watt
CEO
=500mA
C
amb
derate above 25°C
=25°C
C
P
CBO
CEO
EBO
tot
j:Tstg
ZTX614
C
B
E
E-line
TO92 Compatible
120 V
100 V
10 V
800 mA
1.0
5.7
-55 to +200 °C
mW/ °C
W
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
*Measured under pulsed conditions. Pulse Width=300
120 V
=10µA, I
I
C
E
100 V IC=10mA, IB=0*
10 V
=10µA, I
I
E
C
100 nA VCB=60V, IE=0
100 nA VEB=8V, IC=0
1.25 V IC=800mA, IB=8mA*
1.8 V IC=800mA, VCE=5V*
5000
10000
µs. Duty cycle ≤2%
IC=100mA, VCE=5V*
I
=500mA, VCE=5V*
C
3-215
=0
=0
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