Diodes ZTX603 User Manual
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
ZTX602
ZTX603
FEATURES
* 80 Volt V
CEO
* 1 Amp continuous current
* Gain of 2K at I
= 1 Watt
*P
tot
=1 Amp
C
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX602 ZTX603 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
derate above 25°C
amb
= 25°C
Operating and Storage Temperature Range T
CM
C
P
CBO
CEO
EBO
tot
j:Tstg
80 100 V
60 80 V
10 V
4A
1A
1
5.7
mW/ °C
-55 to +200 °C
W
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
80 100 V
=100µA
I
C
60 80 V IC=10mA*
10 10 V
0.01
0.01
10
10
0.1 0.1
10
10
1.0
1.0
1.0
1.0VV
µA
µA
µA
µA
µA
µA
µA
=100µA
I
E
V
=60V
CB
=80V
V
CB
V
=60V,T
CB
=80V,T
V
CB
=8V
V
EB
V
=60V
CES
=80V
V
CES
IC=400mA,
=0.4mA*
I
B
I
=1A, IB=1mA*
C
1.8 1.8 V IC=1A, IB=1mA*
1.7 1.7 V IC=1A, VCE=5V*
amb
amb
3-209
=100°C
=100°C
ELECTRICAL CHARACTERISTICS (at T
ZTX602
ZTX603
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
µs
µs
I
=50mA, VCE=5V
C
=500mA, VCE=5V*
I
C
I
=1A, VCE=5V*
C
=2A, VCE=5V*
I
C
f=20MHz
I
=500mA, VCE=10V
C
=0.5mA
I
B1=IB2
Static Forward
Current Transfer
Ratio
h
FE
2K
5K
2K
100K
0.5K
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
T
ibo
obo
on
t
off
150 150 MHz IC=100mA, VCE=10V
90 Typical pF VEB=500mV, f=1MHz
15 Typical pF VCB=10V, f=1MHz
0.5 Typical
1.1 Typical
*Measured under pulsed conditions. Pulse width=300
2K
5K
100K
2K
0.5K
µs. Duty cycle ≤2%
RS= 50K
RS= 200K
1.0
RS= 1M
RS=
0.8
0.6
DC Conditions
0.4
0.2
0
Maximum Power Dissipation (W)
1 10 100
Ω
Ω
∞
V
- Collector-Emitter Voltage (Volts)
CE
Ω
RS= 10K
ZTX602
Ω
ZTX603
200
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
− Power (act )
0.0057
+25° C
T
amb(max )
T
amb(max
Power (max )
=
)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
Power(actual)= Actual power dissipation in users circuit
and source resistance (RS)
CE
3-210
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