Diodes ZTX601 User Manual
NPN SILICON PLANAR MEDIUM POWER
OBSOLETE
DARLINGTON TRANSISTORS
ZTX600
ZTX601
ISSUE 2 JUNE 94
FEATURES
* 160 Volt V
CEO
* 1 Amp continuous current
* Gain of 5K at I
= 1 Watt
*P
tot
=1 Amp
C
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL ZTX600 ZTX601 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C
amb
derate above 25°C
Operating and Storage Temperature Range T
CM
C
P
CBO
CEO
EBO
tot
j:Tstg
160 180 V
140 160 V
10 V
4A
1A
1
5.7
mW/ °C
-55 to +200 °C
W
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
= 25°C unless otherwise stated).
amb
MIN. TYP. MAX. MIN. TYP. MAX.
160 180 V
I
=100µA
C
140 160 V IC=10mA*
10 10 V
0.01
0.01
10
10
0.1 0.1
10
10
0.75
0.85
1.1
1.2
0.75
0.85
1.1
1.2VV
I
V
µA
V
µA
V
µA
VCB=160V,T
µA
V
µA
V
µA
V
µA
IC=0.5A, IB=5mA*
I
=100µA
E
=140V
CB
=160V
CB
=140V,T
CB
=8V
EB
=140V
CES
=160V
CES
=1A, IB=10mA*
C
1.7 1.9 1.7 1.9 V IC=1A, IB=10mA*
1.5 1.7 1.5 1.7 V IC=1A, VCE=5V*
3-206
=100°C
a
=100°C
a
ZTX600
OBSOLETE
ZTX601
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Static Forward
Current Transfer
Ratio
Group A
Group B
Transition
Frequency
Input Capacitance C
Output
Capacitance
Switching Times t
h
FE
f
T
ibo
C
obo
on
t
off
1K
2K
100K1K2K
1K
1K
2K
2K
5K3K20K1K2K
1K
5K
10K
10K
20K
5K
100K5K10K
10K
150 250 150 250 MHz IC=100mA,
60 90 60 90 pF VEB=0.5V, f=1MHz
10 15 10 15 pF VCE=10V, f=1MHz
0.75 0.75
2.2 2.2
*Measured under pulsed conditions. Pulse width=300
1.0
0.8
0.6
0.4
RS= 50K
RS= 1M
RS=
∞
DC Conditions
RS= 5K
Ω
Ω
Ω
1K
100K
2K
5K3K20K
1K
10K
20K
5K
µs. Duty cycle ≤2%
100K
10K
IC=50mA, VCE=10V*
=0.5A, VCE=10V*
I
C
=1A, VCE=10V*
I
C
=50mA, VCE=10V*
I
C
=0.5A, VCE=10V*
I
C
=1A, VCE=10V*
I
C
=50mA, VCE=10V*
I
C
=0.5A, VCE=10V*
I
C
=1A, VCE=10V*
I
C
V
CE
=0.5A, VCE=10V
I
µs
C
I
B1=IB2
µs
=10V f=20MHz
=0.5mA
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T
amb(max )
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
0.2
0
Maximum Power Dissipation (W)
1 10 100
V
- Collector-Emitter Voltage (Volts)
CE
Voltage Derating Graph
T
amb(max
= Maximum operating ambient temperature
Power (max )
=
)
0.0057
3-207
− Power (act )
200
+25° C
CE
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