Diodes ZTX560 User Manual
ZTX560
E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FEATURES
Excellent hFEcharacterisristics up to IC=50mA
•
Low Saturation voltages
•
PARTMARKING
ZTX
560
T
I
-
U
N
O
P
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current I
Power dissipation P
Operating and storage temperature range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
-500 V
-500 V
-5 V
-500 mA
-150 mA
1W
-55 to +150 °C
I
-
N
L
E
E
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS
Collector-base breakdown boltage V
Collector-emitter breakdown voltage V
Emitter-base breakdown voltage V
Collector cut-off current I
Emitter cut-off current I
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Base-emitter turn on voltage V
Static forward current transfer ratio h
Transition frequency f
Output capacitance C
Switching times t
t
= 25°C)
amb
(BR)CBO
BR(CEO)
(BR)EBO
CBO;ICES
EBO
CE(sat)
BE(sat)
BE(on)
FE
T
obo
on
off
-500 V
-500 V IC=-10mA*
-5 V
-100 nA VCB=-500V; VCE=-500V
-100 nA VEB=-5V
-0.2
-0.5VV
-0.9 V IC=-50mA, IB=-10mA*
-0.9 V IC=-50mA, VCE=-10V*
100
80
15 typ
60 MHz VCE=-20V, IC=-10mA,
110 typ.
1.5 typ.
300
300
8pFVCB=-20V, f=1MHz
ns
s
I
=-100µA
C
I
=-100µA
E
IC=-20mA, IB=-2mA*
I
=-50mA, IB=-10mA*
C
IC=-1mA, VCE=-10V
I
=-50mA, VCE=-10V*
C
I
=-100mA, VCE=-10V*
C
f=50MHz
VCE=-100V, IC=-50mA,
I
=-5mA, IB2=10mA
B1
* Measured under pulsed conditions. Pulse width=300s. Duty cycle ⱕ2%
ISSUE 2 - SEPTEMBER 2006
1
SEMICONDUCTORS
ZTX560
TYPICAL CHARACTERISTICS
SEMICONDUCTORS
ISSUE 2 - SEPTEMBER 2006
2
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