Diodes ZTX558 User Manual
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 400 Volt V
* 200mA continuous current
*P
tot
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
= 1 Watt
CEO
CBO
CEO
EBO
C
tot
j:Tstg
-55 to +200 °C
ZTX558
C
B
E
E-Line
TO92 Compatible
-400 V
-400 V
-5 V
-200 mA
1W
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Collector-Base
Breakdown Voltage
Switching times t
V
(BR)CBO
V
BR(CEO)
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
on
t
off
* Measured under pulsed conditions. Pulse width=300
-400 V
=-100µA
I
C
-400 V IC=-10mA*
-5 V
=-100µA
I
E
-100 nA VCB=-320V
-100 nA VCE=-320V
-100 nA VEB=-4V
-0.2
-0.5VV
IC=-20mA, IB=-2mA
=-50mA, IB=-6mA
I
C
-0.9 V IC=-50mA, IB=-5mA
-0.9 V IC=-50mA, VCE=-10V
100
100
15
300
IC=-1mA, VCE=-10V
I
=-50mA, VCE=-10V
C
I
=-100mA, VCE=-10V*
C
50 MHz IC=-10mA, VCE=-20V
f=20MHz
5pFV
95
1600
µs. Duty cycle ≤2%
ns
ns
=-20V, f=1MHz
CB
IC=-50mA, VC=-100V
I
=5mA, IB2=-10mA
B1
3-202
TYPICAL CHARACTERISTICS
ZTX558
1.6
1.4
1.2
olts)
V
1.0
(
-
0.8
(sat)
E
0.6
C
V
0.4
0.2
0
0.001 0.001
IC/IB=10
IC/IB=20
IC/IB=50
0.01 0.1 20110
IC - Collector Current (Amps)
CE(sat)
Gain
d
ise
mal
r
o
N
-
FE
h
V
+100°C
1.6
+25°C
-55°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01 0.1 20110
v IC
VCE=10V
300
200
100
ypical Gain
- T
FE
h
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFEv IC V
-55°C
1.6
1.4
)
1.2
lts
o
1.0
V
(
-
0.8
E
B
0.6
V
0.4
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
IC - Collector Current (Amps)
BE(on)
V
v IC
VCE=10V
-55°C
1.6
1.4
)
lts
1.2
o
V
1.0
(
-
0.8
(sat)
E
0.6
C
V
0.4
0.2
0
+25°C
+100°C
+175°C
0.01 0.1 20110
IC - Collector Current (Amps)
V
-55°C
1.6
1.4
1.2
olts)
V
1.0
(
-
0.8
(sat)
0.6
E
B
0.4
V
0.2
0
0.001
1.0
0.1
0.01
- Collector Current (Amps)
C
I
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
0.1ms
VCE - Collector Voltage (Volts)
Safe Operating Area
CE(sat)
BE(sat)
v IC
v IC
100110
amb
IC/IB=10
IC/IB=10
=25°C
1000
3-203
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