Diodes ZTX553 User Manual
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX552
ZTX553
ISSUE 1 MARCH 94
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
=1 Watt
*P
tot
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL ZTX552 ZTX553 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation: at T
derate above 25°C
amb
=25°C
Operating and Storage Temperature Range T
P
CBO
CEO
EBO
CM
C
tot
j:Tstg
-100 -120 V
-80 -100 V
-5 V
-2 A
-1 A
1
5.7
mW/ °C
-55 to +200 °C
W
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX552 ZTX553 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-onn Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
-100 -120 V
=-100µA
I
C
-80 -100 V IC=-10mA
-5 -5 V
-0.1
-0.1
-0.1 -0.1
µA
µA
=-100µA
I
E
V
=-80V
CB
=-100V
V
CB
=-4V
V
EB
-0.25 -0.25 V IC=-150mA, IB=-15mA*
-1.1 -1.1 V IC=-150mA, IB=-15mA*
-1.0 -1.0 V IC=-150mA, VCE=-10V*
40
150 40
10
200 IC=-150mA, VCE=-10V*
10
=-1A, VCE=-10V*
I
C
150 150 MHz IC=-50mA, VCE=-10V
f=100MHz
12 12 MHz VCB=-10V, f=1MHz
µs. Duty cycle ≤2%
3-196
ZTX552
ZTX553
-0.8
-0.6
olts)
(V
-0.4
-
(sat)
E
-0.2
C
V
0
-0.001
IC - Collector Current (Amps)
100
80
60
40
- Normalised Gain (%)
20
FE
h
-0.001
VCE=-10V
-0.01
IC - Collector Current (Amps) IC - Collector Current (Amps)
TYPICAL CHARACTERISTICS
tf
ts
nS
µS
600
-0.1
3
400
2
1
200
100
0
0
-1
-1
IB1=IB2=IC/10
IC/IB=10
-0.01
-0.1
td
tr
ns
ns
100
200
e
80
160
m
i
t
60
120
tching
40
Swi
20
-1
0
ts
tf
td
80
tr
40
0
-0.01
-0.1
IC - Collector Current (Amps)
CE(sat)
V
v IC
-1.0
-0.8
Switching Speeds
IC/IB=10
olts)
-0.6
- (V
)
t
(sa
BE
-0.4
V
-0.2
-10-0.1 -1
-0.001
hFEv IC V
-0.01
BE(sat)
v IC
olts)
V
(
-
E
B
V
-1.2
-1.0
-0.8
-0.6
-0.4
VCE=-10V
-0.0001
IC - Collector Current (Amps)
V
-0.001
BE(on)
-0.01 -0.1
v IC
-10
-1
-0.1
- Collector Current (Amps)
C
I
-1
-0.01
3-197
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
100µs
-0.1 -100-1 -10
VCE - Collector Voltage (Volts)
Safe Operating Area
=25°C
amb
ZTX552
3
55
X
ZT
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