Diodes ZTX549A User Manual
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX549
ZTX549A
ISSUE 1 MARCH 94
FEATURES
* 30 Volt V
CEO
* 1 Amp continuous current
= 1 Watt
*P
tot
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation: at T
derate above 25°C
amb
=25°C
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
P
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
-35 V
-30 V IC=-10mA
-5 V
-0.1
-10
-0.1
-0.25
-0.50
-0.50
-0.75VV
ZTX549A -0.30 V I
Base-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
70
80
40
-0.9 -1.25 V IC=-1A, IB=-100mA*
-0.85 -1 V IC=-1A, VCE=-2V*
200
130
80
ZTX549 100 160 300 I
ZTX549A 150 200 500 I
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
3-191
-35 V
-30 V
-5 V
-2 A
-1 A
1
5.7
mW/ °C
-55 to +200 °C
I
=-100µA
C
=-100µA
I
E
V
µA
µA
µA
CB
V
CB
V
EB
=-30V
=-30V, T
=-4V
amb
IC=-1A, IB=-100mA*
I
=-2A, IB=-200mA*
C
=-100mA, IB=-1mA*
C
IC=-50mA, VCE=-2V*
=-1A, VCE=-2V*
I
C
=-2A, VCE=-2V*
I
C
=-500mA, VCE=-2V*
C
=-500mA, VCE=-2V*
C
W
=100°C
ELECTRICAL CHARACTERISTICS (at T
ZTX549
ZTX549A
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency f
Output Capacitance C
Switching Times t
T
obo
on
t
off
100 MHz IC=-100mA, VCE=-5V
= 25°C).
amb
f=100MHz
25 pF VCB=-10V, f=1MHz
300 ns IC=-500mA, VCC=-10V
50 ns
I
B1=IB2
=-50mA
3-192
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