Diodes ZTX457 User Manual
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 300 Volt V
* 0.5 Amp continuous current
*P
tot
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
= 1 Watt
CEO
=25°C P
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
ZTX457
C
B
E
E-Line
TO92 Compatible
300 V
300 V
5V
1A
500 mA
1W
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
*Measured under pulsed conditions. Pulse width=300
300 V
=100µA, I
I
C
300 V IC=10mA, IB=0*
5V
10010nA
µA
I
=100µA
E
V
=200V
CB
V
=200V, T
CB
100 nA VEB=4V
0.3 V IC=100mA, IB=10mA*
1VI
=100mA, IB=10mA*
C
1 V IC=100mA, VCE=10V*
50
50
25
300
IC=10mA, VCE=10V*
=50mA, VCE=10V*
I
C
I
=100mA, VCE=10V*
C
75 MHz IC=50mA, VCE=10V
f=20MHz
µs. Duty cycle ≤ 2%
3-181
E
=0
amb
=100°C
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