Diodes ZTX449 User Manual
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 30 Volt V
* 1 Amp continuous current
*P
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
= 1 Watt
tot
CEO
= 25°C P
amb
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
50 V
30 V IC=10mA, IB=0
5V
70
100
80
40
T
obo
150 MHz IC=50mA, VCE=10V
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C unless otherwise stated).
amb
0.1
10
0.1
0.5
1
µA
µA
µA
V
V
1.25 V IC=1A, IB=100mA*
1VIC=1A,VCE=2V*
300
15 pF VCB=10V, f=1MHz
µs. Duty cycle ≤ 2%
3-173
ZTX449
C
B
E
E-Line
TO92 Compatible
50 V
30 V
5V
2A
1A
1W
-55 to +200 °C
=100µA, I
I
C
=100µA, I
I
E
V
=40V
CB
V
=40V, T
CB
V
=4V, IC=0
EB
IC=1A, IB=100mA*
=2A, IB=200mA*
I
C
I
=50mA, VCE=2V*
C
=500mA, VCE=2V*
I
C
I
=1A, VCE=2V*
C
=2A, VCE=2V*
I
C
f=100MHz
=0
E
=0
C
amb
=100°C
ZTX449
TYPICAL CHARACTERISTICS
olts)
- (V
(sat)
E
C
V
E
F
h
tf,tr,td
e
m
i
t
Switching
olts)
- (V
)
t
sa
(
BE
V
ns
150
tf
100
tr
td
50
ts
0
0.01
0.1
IC - Collector Current (Amps)
Switching Speeds
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.001
IC/IB=10
0.01 0.1
0.8
0.001
IC/IB=10
0.01
0.1 1
10
0.6
0.4
0.2
0
IC - Collector Current (Amps)
CE(sat)
200
160
120
V
80
40
0
0.001
v IC
VCE=2V
0.01 0.1
1
10
IB1=IB2=IC/10
VCE=10V
tf
tr
td
1
ts
ns
800
600
400
200
ts
0
1
10
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFEv IC V
BE(sat)
v IC
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
300µs
100µs
0.1
VCE - Collector Voltage (Volts)
1 10 100
Safe Operating Area
1.8
1.6
1.4
)
s
t
1.2
l
o
V
1.0
(
-
)
0.8
n
(o
0.6
BE
V
0.4
0.2
0.001
VCE=2V
0.01 0.1
1
10
ps)
Am
(
nt
e
r
Cur
r
to
c
le
l
Co
-
C
I
10
1
0.1
0.01
IC - Collector Current (Amps)
BE(on)
V
v IC
=25°C
amb
3-174
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