Diodes ZTX415 User Manual
NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
* Low inductance package
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
* Suitable for single, series and parallel operation
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Collector Current (Pulse Width=20ns) I
Power Dissipation P
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Current in Second
Breakdown (Pulsed)
Static Forward Current
Transfer Ratio
Transition Frequency f
Collector-Base
Capacitance
V
(BR)CES
V
CEO(sus)
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
I
SB
h
FE
T
C
cb
*Measured under pulsed conditions. Pulse width=300
260 V IC=1mA
100 V
6V
15
25
25 IC=10mA, VCE=10V*
40 MHz IC=10mA, VCE=20V
CBO
CEO
EBO
C
CM
tot
j:Tstg
= 25°C unless otherwise stated).
amb
0.1
10
0.1
µA
µA
µA
0.5 V IC=10mA, IB=1mA*
0.9 V IC=10mA, IB=1mA*
A
A
8pFVCB=20V, IE=0
µs. Duty cycle ≤ 2%
ZTX415
C
B
E
E-Line
TO92 Compatible
260 V
100 V
6V
500 mA
60 A
680 mW
-55 to +175 °C
= -55 to +175°C
T
amb
I
=100µA
C
=10µA
I
E
V
=180V
CB
V
=180V, T
CB
V
=4V
EB
VC=200V, CCE=620pF
V
=250V, CCE=620pF
C
f=20MHz
f=100MHz
amb
=100°C
3-171
ZTX415
TYPICAL CHARACTERISTICS
180
160
140
)
120
A
(
-
100
80
I
60
40
20
0
04020 80 100 120 140 160 18060
11
1. >4x10 Operations Without Fai lure
7
2. 10 Operations To Failure
3
3. 10 Operations To Failure
2.
1.
Pulse Width (ns)
Maximum Avalanche Current
v Pulse Width
100
80
60
h
40
20
0
100µA
175°C
25°C
-55°C
1mA 10mA 100mA 1A
Collector Current
hFEv IC
40
30
)
A
(
3.
-
20
I
10
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VC= 250V
VC= 200V
Temperature (°C)
USB
I
v Temperature
for the specified conditions
220
VCE=10V
200
)
180
V
(
-
160
V
140
120
100
100p 1n 10n 100n
Risetime of Base
Drive Current = 5mA/ns
IB=50mA
IB=100mA
IB=200mA
Collector-Emitter Capacitance (F)
Minimum starting voltage
as a function of capacitance
180
175
170
165
(V)
-
160
155
V
150
145
110
C=620pF
IB=60mA
IB=100mA
IB=200mA
160
150
(V)
-
140
V
120
100
-60 - 40 -20 0 20 40 60 80 100 120 140 160 180
Risetime of Base Drive (mA/ns)
Minimum starting voltage
as a function of drive current
3-172
C = 620pF
Temperature (°C)
Minimum starting voltage
as a function of temperature
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