PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - January 1997
FEATURES
*V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation Voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
= - 25V
CEO
PARAMETER SYMBOL ZTX1149A UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-55 to +200 °C
ZTX1149A
C
B
E
E-Line
TO92 Compatible
-30 V
-25 V
-5 V
-10 A
-3 A
-500 mA
1W
ZTX1149A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL UNIT CONDITIONS.
MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
cb
on
t
off
-30 -70 V
-25 -60 V
I
=-100µA
C
=-100µA
I
C
-25 -60 V IC=-10mA *
-25 -60 V
-5 -8.5 V
I
=-100µA, VEB=+1V
C
I
=-100µA
E
-0.3 -100 nA VCB=-24V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA VCE=-20V
-45
-100
-140
-170
-200
-80
-170
-240
-260
-300
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
I
=-0.5A, IB=-3mA*
C
I
=-1A, IB=-7mA*
C
I
=-2A, IB=-30mA*
C
=-3A, IB=-70mA*
I
C
-870 -1000 mV IC=-3A, IB=-70mA*
-800 -900 mV IC=-3A, VCE=-2V*
270
250
195
115
450
400
320
190
50
800
IC=-10mA, VCE=-2V*
I
=-0.5A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-5A, VCE=-2V*
C
=-10A, VCE=-2V*
I
C
135 MHz IC=-50mA, VCE=-10V
f=50MHz
50 pF VCB=- 10V, f= 1MHz
150 ns IC=-4A, IB=-40mA,
V
=-10V
CC
270 ns
=-4A, IB=±40mA,
I
C
V
=-10V
CC
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.